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公开(公告)号：US20240153745A1
公开(公告)日：2024-05-09
申请号：US17981394
申请日：2022-11-05
Applicant: Applied Materials, Inc.
Inventor： Katherine Woo , Jennifer Y. Sun , Jian Li , Wenhao Zhang , Mayur Govind Kulkarni , Chidambara A. Ramalingam , Ryan Sheil , Martin J. Seamons , Nitin Deepak
IPC: H01J37/32 , C23C16/455 , C23C28/04 , C25D11/18
CPC classification number: H01J37/32495 , C23C16/45525 , C23C28/046 , C25D11/18 , H01J37/32467
Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.
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公开(公告)号：US12131934B2
公开(公告)日：2024-10-29
申请号：US17063334
申请日：2020-10-05
Applicant: Applied Materials, Inc.
Inventor： Katherine Woo , Paul L. Brillhart , Jian Li , Shinnosuke Kawaguchi , David W. Groechel , Dorothea Buechel-Rimmel , Juan Carlos Rocha-Alvarez , Paul E. Fisher , Chidambara A. Ramalingam , Joseph J. Farah
CPC classification number: H01L21/68 , G01L9/08 , H01J37/32724 , H04Q9/00 , H01J2237/20264 , H01L21/67103 , H01L21/6833 , H01L21/6838
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.
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公开(公告)号：US20240347336A1
公开(公告)日：2024-10-17
申请号：US18135434
申请日：2023-04-17
Applicant: Applied Materials, Inc.
Inventor： Nitin Deepak , Ryan Sheil , Jennifer Y. Sun , Zhijun Jiang , Katherine Woo
CPC classification number: H01L21/02178 , C23C16/08 , H01J37/32091 , H01J37/321 , H01L21/0214 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01J2237/332
Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of material comprises a metal-and-fluorine-containing material.
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公开(公告)号：US20220122817A1
公开(公告)日：2022-04-21
申请号：US17071515
申请日：2020-10-15
Applicant: Applied Materials, Inc.
Inventor： Paul L. Brillhart , Jian Li , Katherine Woo , Matthew Miller , Shinnosuke Kawaguchi
IPC: H01J37/32 , C23C14/50 , C23C16/458
Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10−6/° C.
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公开(公告)号：US20220333244A1
公开(公告)日：2022-10-20
申请号：US17235258
申请日：2021-04-20
Applicant: Applied Materials, Inc.
Inventor： Sumit Agarwal , Katherine Woo , Shawyon Jafari , Jian Li , Chidambara A. Ramalingam
IPC: C23C16/455 , B22D30/00
Abstract: Exemplary semiconductor processing chamber showerheads include an inner core region. The inner core region may define a plurality of apertures. The showerheads may include an outer core region disposed about an outer periphery of the inner core region. The outer core region may define an annular channel. The showerheads may include a heating element disposed within the annular channel. The showerheads may include an annular liner disposed about an outer periphery of the outer core region. The inner core region and the outer core region may include an aluminum alloy. The annular liner may have a lower thermal conductivity than the aluminum alloy.
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Patent Agency Ranking
公开(公告)号：US20220108907A1
公开(公告)日：2022-04-07
申请号：US17063334
申请日：2020-10-05
Applicant: Applied Materials, Inc.
Inventor： Katherine Woo , Paul L. Brillhart , Jian Li , Shinnosuke Kawaguchi , David W. Groechel , Dorothea Buechel-Rimmel , Juan Carlos Rocha-Alvarez , Paul E. Fisher , Chidambara A. Ramalingam , Joseph J. Farah
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.
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公开(公告)号：US20220127723A1
公开(公告)日：2022-04-28
申请号：US17079155
申请日：2020-10-23
Applicant: Applied Materials, Inc.
Inventor： Jian Li , Juan Carlos Rocha-Alvarez , Mayur Govind Kulkarni , Paul L. Brillhart , Vidyadharan Srinivasamurthy , Katherine Woo , Wenhao Zhang
IPC: C23C16/458 , H01J37/32
Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The substrate support surface may include a dielectric coating. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a cooling hub positioned below a base of the support stem and coupled with a cooling fluid source. The electrostatic chuck body may define at least one cooling channel that is in communication with a cooling fluid source. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an AC power rod extending through the support stem and electrically coupled with the heater. The substrate support assemblies may include a plurality of voids formed within the electrostatic chuck body between the at least one cooling channel and the heater.
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公开(公告)号：US12300474B2
公开(公告)日：2025-05-13
申请号：US17071515
申请日：2020-10-15
Applicant: Applied Materials, Inc.
Inventor： Paul L. Brillhart , Jian Li , Katherine Woo , Matthew Miller , Shinnosuke Kawaguchi
IPC: H01J37/32 , C23C14/50 , C23C16/458
Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10−6/° C.
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公开(公告)号：US20250054797A1
公开(公告)日：2025-02-13
申请号：US18929425
申请日：2024-10-28
Applicant: Applied Materials, Inc.
Inventor： Katherine Woo , Paul L. Brillhart , Jian Li , Shinnosuke Kawaguchi , David W. Groechel , Dorothea Buechel-Rimmel , Juan Carlos Rocha-Alvarez , Paul E. Fisher , Chidambara A. Ramalingam , Joseph J. Farah
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.
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10.发明申请公开(公告)号：US20250003061A1
公开(公告)日：2025-01-02
申请号：US18343351
申请日：2023-06-28
Applicant: Applied Materials, Inc.
Inventor： Nitin Deepak , Ryan Sheil , Katherine Woo , Juan Carlos Rocha-Alvarez , Jennifer Y. Sun
Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more interface deposition precursors to the processing region. The methods may include depositing a layer of interface material on the component for semiconductor processing in the processing region. The methods may include providing one or more coating deposition precursors to the processing region. The methods may include depositing a layer of coating material on the component for semiconductor processing in the processing region.
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