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公开(公告)号：US20220364231A1
公开(公告)日：2022-11-17
申请号：US17317342
申请日：2021-05-11
Applicant: Applied Materials, Inc.
Inventor： Tetsuya ISHIKAWA , Swaminathan T. SRINIVASAN , Matthias BAUER , Ala MORADIAN , Manjunath SUBBANNA , Kartik Bhupendra SHAH , Errol Antonio C. SANCHEZ , Sohrab ZOKAEI , Michael R. RICE , Peter REIMER
IPC: C23C16/455 , B01J4/00 , C23C16/44
Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.
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Patent Agency Ranking
公开(公告)号：US20240231042A9
公开(公告)日：2024-07-11
申请号：US17971494
申请日：2022-10-21
Applicant: Applied Materials, Inc.
Inventor： Ala MORADIAN , Amir H. TAVAKOLI , Peter REIMER , Shu-Kwan LAU
CPC classification number: G02B7/182 , C30B35/00 , G02B1/14 , G02B7/1815 , G02B17/002
Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.
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公开(公告)号：US20220364229A1
公开(公告)日：2022-11-17
申请号：US17317565
申请日：2021-05-11
Applicant: Applied Materials, Inc.
Inventor： Tetsuya ISHIKAWA , Swaminathan T. SRINIVASAN , Matthias BAUER , Manjunath SUBBANNA , Ala MORADIAN , Kartik Bhupendra SHAH , Errol Antonio C SANCHEZ , Michael R. RICE , Peter REIMER , Marc SHULL
Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.
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公开(公告)号：US20240337020A1
公开(公告)日：2024-10-10
申请号：US18747687
申请日：2024-06-19
Applicant: Applied Materials, Inc.
Inventor： Tetsuya ISHIKAWA , Swaminathan T. SRINIVASAN , Matthias BAUER , Ala MORADIAN , Manjunath SUBBANNA , Kartik Bhupendra SHAH , Errol Antonio C. SANCHEZ , Sohrab ZOKAEI , Michael R. RICE , Peter REIMER
IPC: C23C16/455 , B01J4/00 , C23C16/44
CPC classification number: C23C16/4558 , B01J4/005 , B01J4/008 , C23C16/4412 , C23C16/45587
Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.
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公开(公告)号：US20240134151A1
公开(公告)日：2024-04-25
申请号：US17971494
申请日：2022-10-20
Applicant: Applied Materials, Inc.
Inventor： Ala MORADIAN , Amir H. TAVAKOLI , Peter REIMER , Shu-Kwan LAU
CPC classification number: G02B7/182 , C30B35/00 , G02B1/14 , G02B7/1815 , G02B17/002
Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.
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公开(公告)号：US20220364261A1
公开(公告)日：2022-11-17
申请号：US17317363
申请日：2021-05-11
Applicant: Applied Materials, Inc.
Inventor： Tetsuya ISHIKAWA , Swaminathan T. SRINIVASAN , Kartik Bhupendra SHAH , Ala MORADIAN , Manjunath SUBBANNA , Matthias BAUER , Peter REIMER , Michael R. RICE
IPC: C30B25/08 , C30B25/12 , C30B25/14 , C30B25/10 , C23C16/458 , C23C16/46 , C23C16/455
Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.
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