公开(公告)号：US20200283900A1

公开(公告)日：2020-09-10

申请号：US16808046

申请日：2020-03-03

Applicant: Applied Materials, Inc.

Inventor： Sumit AGARWAL ,  Chad PETERSON ,  Marc SHULL

IPC: C23C16/455

Abstract: A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

公开(公告)号：US20220367216A1

公开(公告)日：2022-11-17

申请号：US17317684

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Kostiantyn ACHKASOV ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Marc SHULL ,  Ji-Dih HU

IPC: H01L21/67 ,  C23C16/44

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

公开(公告)号：US20220364229A1

公开(公告)日：2022-11-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Manjunath SUBBANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH ,  Errol Antonio C SANCHEZ ,  Michael R. RICE ,  Peter REIMER ,  Marc SHULL

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C30B25/16 ,  C30B25/10 ,  C23C16/52

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.