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    APPARATUS AND PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE
    1.
    发明申请
    APPARATUS AND PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE 审中-公开
    装置和等离子体喷雾方法，用于增加光催化剂去除速率

    公开(公告)号：WO2006026765A2

    公开(公告)日：2006-03-09

    申请号：PCT/US2005/031492

    申请日：2005-09-01

    Applicant: AXCELIS TECHNOLOGIES, INC. ,  FERRIS, David ,  HAMMAR, Philip ,  BECKNELL, Alan

    Inventor： FERRIS, David ,  HAMMAR, Philip ,  BECKNELL, Alan

    IPC: G03F7/42 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32522 ,  H01J2237/3342 ,  H01L21/0206 ,  H01L21/76814

    Abstract: A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

    Abstract translation: 一种用于去除光致抗蚀剂材料并从包括碳，氢或碳和氢的组合的衬底后蚀刻残留物的等离子体灰化过程，其中所述衬底包括低k电介质层，所述方法包括从基本上不含氧形成等离子体， 无氮气体混合物; 将等离子体引入处理室，其中处理室包括与等离子体流体连通的挡板组件; 使等离子体流过挡板组件并从衬底去除光致抗蚀剂材料，后蚀刻残余物和挥发性副产物; 通过将氧等离子体引入到处理室中来周期性地清洁处理室; 并通过将冷却气体流过挡板组件来冷却挡板组件。 处理室适于接收下游等离子体，所述处理室包括上挡板，所述上挡板包括与所述处理室的壁热连通的至少一个导热支座; 以及与上挡板间隔开的下挡板。

    PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE AND PLASMA APPARATUS WITH COOLING MEANS
    5.
    发明公开
    PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE AND PLASMA APPARATUS WITH COOLING MEANS 审中-公开
    等离子焚烧法，以增加光阻距离率及血浆设备符合冷却设备

    公开(公告)号：EP1784690A2

    公开(公告)日：2007-05-16

    申请号：EP05795946.2

    申请日：2005-09-01

    Applicant: AXCELIS TECHNOLOGIES, INC.

    Inventor： FERRIS, David ,  HAMMAR, Philip ,  BECKNELL, Alan

    IPC: G03F7/42 ,  H01L21/027 ,  H01J37/32

    CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32522 ,  H01J2237/3342 ,  H01L21/0206 ,  H01L21/76814

    Abstract: A plasma ashing process for removing photoresist material and post etch residues from a substrate, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

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