公开(公告)号：US11114270B2

公开(公告)日：2021-09-07

申请号：US16106745

申请日：2018-08-21

Applicant: Axcelis Technologies, Inc.

Inventor： Bo Vanderberg ,  Edward Eisner

IPC: H01J37/147 ,  H01F7/20 ,  H01J37/317 ,  H01F3/02 ,  H01F27/28

Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.

公开(公告)号：US10573485B1

公开(公告)日：2020-02-25

申请号：US16227296

申请日：2018-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Edward Eisner ,  Bo Vanderberg ,  Neil Bassom ,  Michael Cristoforo ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.

公开(公告)号：US11037754B2

公开(公告)日：2021-06-15

申请号：US16720499

申请日：2019-12-19

Applicant: Axcelis Technologies, Inc.

Inventor： Edward Eisner ,  Bo Vanderberg

IPC: H01J37/153 ,  H01J37/317 ,  H01J37/147

Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.

公开(公告)号：US20200066478A1

公开(公告)日：2020-02-27

申请号：US16106745

申请日：2018-08-21

Applicant: Axcelis Technologies, Inc.

Inventor： Bo Vanderberg ,  Edward Eisner

IPC: H01J37/147 ,  H01J37/317 ,  H01F7/20

Abstract: A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.

公开(公告)号：US10553392B1

公开(公告)日：2020-02-04

申请号：US16218884

申请日：2018-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward Eisner ,  Bo Vanderberg

IPC: H01J37/153 ,  H01J37/317 ,  H01J37/147

Abstract: An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.