公开(公告)号：US20240035148A1

公开(公告)日：2024-02-01

申请号：US18361024

申请日：2023-07-28

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  David Sporleder ,  Udo H. Verkerk ,  Atul Gupta ,  Edward Moore

IPC: C23C14/48 ,  H01J37/317 ,  C23C14/14

CPC classification number: C23C14/48 ,  H01J37/3171 ,  C23C14/14

Abstract: An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.