HYBRID HIGH-TEMPERATURE ELECTROSTATIC CLAMP FOR IMPROVED WORKPIECE TEMPERATURE UNIFORMITY

    公开(公告)号:US20220148847A1

    公开(公告)日:2022-05-12

    申请号:US17523359

    申请日:2021-11-10

    Abstract: A thermal electrostatic clamp has a central electrostatic portion associated with a central region of a workpiece. A central body has a clamping surface and one or more electrodes are associated with the central body. One or more electrodes selectively electrostatically clamp at least the central region of the workpiece to the clamping surface based on an electrical current passed therethrough. One or more first heaters of the central body selectively heat the central electrostatic portion to a first temperature. A non-electrostatic peripheral portion associated with a peripheral region of the workpiece has a peripheral body encircling the central body, separated by a gap. The peripheral body is positioned beneath the peripheral region of the workpiece. The peripheral portion does not electrostatically clamp the peripheral region of the workpiece. One or more second heaters of the peripheral body selectively heat the non-electrostatic peripheral portion to a second temperature.

    Hybrid high-temperature electrostatic clamp for improved workpiece temperature uniformity

    公开(公告)号:US11887808B2

    公开(公告)日:2024-01-30

    申请号:US17523359

    申请日:2021-11-10

    CPC classification number: H01J37/20 H01L21/6833 H01J37/3171 H01J2237/2007

    Abstract: A thermal electrostatic clamp has a central electrostatic portion associated with a central region of a workpiece. A central body has a clamping surface and one or more electrodes are associated with the central body. One or more electrodes selectively electrostatically clamp at least the central region of the workpiece to the clamping surface based on an electrical current passed therethrough. One or more first heaters of the central body selectively heat the central electrostatic portion to a first temperature. A non-electrostatic peripheral portion associated with a peripheral region of the workpiece has a peripheral body encircling the central body, separated by a gap. The peripheral body is positioned beneath the peripheral region of the workpiece. The peripheral portion does not electrostatically clamp the peripheral region of the workpiece. One or more second heaters of the peripheral body selectively heat the non-electrostatic peripheral portion to a second temperature.

    Blended energy ion implantation
    4.
    发明申请

    公开(公告)号:US20230038392A1

    公开(公告)日:2023-02-09

    申请号:US17881020

    申请日:2022-08-04

    Abstract: Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.

    BACKSIDE IMPLANT FOR WAFER CURVATURE CONTROL

    公开(公告)号:US20250157821A1

    公开(公告)日:2025-05-15

    申请号:US18948701

    申请日:2024-11-15

    Abstract: A method for controlling workpiece deformation presents a first side of a first workpiece having an initial planarity to a first ion beam. The first ion beam deforms the first workpiece to define a first deformation of the first workpiece. A second side of the first workpiece is presented to a second ion beam to define a second deformation of the first workpiece that generally counteracts the first deformation of the first workpiece to define a final planarity of the first workpiece. The first workpiece can be a donor workpiece that is annealed after being presented to the second ion beam to define a split layer on one or more of the first and second sides of the donor workpiece. A receiver workpiece is bonded to the donor workpiece and is split from the donor workpiece to define an engineered substrate.

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