6.
    发明专利
    未知

    公开(公告)号:DE10319742A1

    公开(公告)日:2004-11-18

    申请号:DE10319742

    申请日:2003-04-30

    Applicant: BASF AG

    Abstract: The invention relates to a process for vapor deposition of one or more compounds onto a support, in which (i) the compound is introduced in a solid or gaseous state into a carrier gas stream, (ii) the compound is present in a gaseous state in the carrier gas stream, (iii) the gaseous compound is precipitated, (iv) the compound precipitated in step (iii) is once again brought into the gaseous state, and (v) the gaseous compound is subsequently precipitated on the support, wherein the carrier gas stream comprising the gaseous compound(s) is cooled to a temperature below the sublimation temperature of the compound(s) by introduction of a gas stream.

    8.
    发明专利
    未知

    公开(公告)号:DE10320103A1

    公开(公告)日:2004-12-02

    申请号:DE10320103

    申请日:2003-05-05

    Applicant: BASF AG

    Abstract: Process for preparing tris-ortho-metallated iridium complexes of the formula (I) where R1, R2, R3, R4, R5, R6 and X have the meanings given in the description, Ir complexes which can be prepared by the process of the invention, the use of the Ir complexes as emitter molecule in organic light-emitting diodes (OLEDs), a light-emitting layer comprising the Ir complexes, an OLED comprising this light-emitting layer and an apparatus comprising an OLED according to the present invention.

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