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    Optical storage medium with reversible phase transitions - comprising tellurium-arsenic-germanium amorphous-crystalline layer on glass substrate
    4.
    发明专利
    Optical storage medium with reversible phase transitions - comprising tellurium-arsenic-germanium amorphous-crystalline layer on glass substrate 未知

    公开(公告)号：DE4030510A1

    公开(公告)日：1992-04-02

    申请号：DE4030510

    申请日：1990-09-27

    Applicant: BASF AG

    Inventor： ISELBORN STEFAN DR ,  HIBST HARTMUT DR

    IPC: G11B7/0055 ,  G11B7/24

    Abstract: A reversible, optical recording medium is disclosed, with at least one substrate and at least one Te-As-Ge contg. storage layer of the phase transition type. The storage layer is formed from a Te-As-Ge alloy with a Ge content between 8 and 24 atomic % and an As content between 19 and 39 atomic %. A dielectric layer is deposited on at least one side of the storage layer. A reflection layer is deposited between the storage/dielectric layer system and the substrate, or on the side of the substrate opposite the layer system. The layers are formed by sputtering or evapn. ADVANTAGE - The device is highly sensitive, can be written to at temps. below 600 deg.C and erased in less than 300 ns. It has a high reflection contrast between the amorphous and crystalline states. The crystallisation temp. is above 1000 deg.C, so that stability of the recorded information is ensured over a long period of time.

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