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公开(公告)号:JPH06207277A
公开(公告)日:1994-07-26
申请号:JP17151693
申请日:1993-07-12
Applicant: BASF AG
Inventor: PEETAA HESERU , KURAUSU HARUTO , GEERUHARUTO HOFUMAN , HARUTOMUUTO HIBUSUTO
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公开(公告)号:JPH06204126A
公开(公告)日:1994-07-22
申请号:JP17151593
申请日:1993-07-12
Applicant: BASF AG
Inventor: PEETAA HESERU , GEERUHARUTO HOFUMAN
Abstract: PURPOSE: To provide a method, which brings a bond of an arbitrary polymer with a carrier without limiting the kind of a polymer in the same manner as a conventional method and moreover, brings this bond within at least several hours and if circumstances requires, accurately and reprodubibly in the time of the order of minute. CONSTITUTION: In a method of manufacturing a microscopic pattern, which has a pattern depth in the extent of several μms to 1 mm, by a method wherein X-rays are applied to a polymer and the image formation part to be exposed of the polymer is removed, the polymer prior to the exposure of the image formation part is molten in a state that it is pressed, whereby the polymer is mounted on a conductive carrier in a layer thickness in the extent of several μms to one mm and is made to secure to the carrier.
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公开(公告)号:JPH06177015A
公开(公告)日:1994-06-24
申请号:JP21878793
申请日:1993-09-02
Applicant: BASF AG
Inventor: PEETAA HESERU , OSUKARU SHIYUTEFUAN , GEERUHARUTO HOFUMAN , YURUGEN RANGEN
IPC: B29C35/08 , B29C43/18 , B29C59/16 , B29C70/78 , B81B1/00 , B81C1/00 , G03F7/16 , G03F7/20 , H01L21/027
Abstract: PURPOSE: To provide a method in which all desired polymers can be processed, so that a polymer/substrate complex having durability can be obtained, and to form this polymer with exactness and reproducibility in an extremely short time such that a highly exact layer thickness can be obtained for the entire area, and cracks are not generated. CONSTITUTION: This method for manufacturing a microstructural element, having a structure depth ranging from several μm to a mm with image formation radiation by X-rays of a polymer and the removal of an image formation radiated polymer band. Before the image formation radiation, a polymer 6 is formed on a conductive substrate 5, and the polymer is exactly fixed to it in a layer thickness, ranging from several μms to a mm by pressure-fusion with a pressurizing member 1 in a frame 2.
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公开(公告)号:JPH06240441A
公开(公告)日:1994-08-30
申请号:JP17499593
申请日:1993-07-15
Applicant: BASF AG
Inventor: PEETAA HESERU , KURAUSU HARUTO , GEERUHARUTO HOFUMAN , HARUTOMUUTO HIBUSUTO
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公开(公告)号:JPH07206945A
公开(公告)日:1995-08-08
申请号:JP31303094
申请日:1994-12-16
Applicant: BASF AG
Inventor: YURUGEN TOROPUSHIYU , HAARARUTO MAIA , HANSUUYURUGEN RAUBENHAIMAA , PEETAA HESERU , AKUSERU ZANAA
IPC: B01D21/01 , C02F1/56 , C08F2/04 , C08F2/06 , C08F2/10 , C08F4/04 , C08F4/28 , C08F20/34 , C08F26/10 , C08F220/34 , C08F220/38 , C08F226/06 , C08F226/10
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公开(公告)号:JPH05148369A
公开(公告)日:1993-06-15
申请号:JP3631092
申请日:1992-02-24
Applicant: BASF AG
Inventor: TOOMASU BUYUNSHIYU , PEETAA HESERU , GEERUHARUTO HOFUMAN , YURUGEN RANGEN
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公开(公告)号:JPH0559199A
公开(公告)日:1993-03-09
申请号:JP3630992
申请日:1992-02-24
Applicant: BASF AG
Inventor: PEETAA HESERU , GEERUHARUTO HOFUMAN , TOOMASU BUYUNSHIYU , YURUGEN RANGEN
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公开(公告)号:JPH0312466A
公开(公告)日:1991-01-21
申请号:JP13423090
申请日:1990-05-25
Applicant: BASF AG
Inventor: PEETAA HESERU , HANSU SHIYUTSUPU , KURAUSU RIINERUTO , HERUMUUTO REEMAN
IPC: C08G18/75 , C08G18/34 , C08G18/60 , C08G18/72 , C08G18/80 , C09D5/25 , C09D175/00 , C09D175/04 , C09J175/04 , H01B3/30
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