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    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE
    1.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE 审中-公开
    包含聚乙烯内酯的化学机械抛光组合物

    公开(公告)号：WO2014184703A2

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014061201

    申请日：2014-05-05

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 更多的聚乙烯亚胺（C）水（D）任选地一种或多种另外的组分，其中组合物的pH在2至6的范围内。

    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID
    2.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID 审中-公开
    包含N，N，N'，N'-四（2-羟基丙基） - 乙烯二胺或甲磺酸的化学机械抛光组合物

    公开(公告)号：WO2014184709A2

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014061236

    申请日：2014-05-06

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N',N'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了包含以下组分的化学机械抛光（CMP）组合物：（A）在2至6（B）N范围内的pH下具有-15mV或更低的ζ电位差的表面改性二氧化硅颗粒， N，N'，N'-四 - （2-羟丙基） - 乙二胺或甲磺酸（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2-6范围内。

    USE OF CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING SUBSTANCE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    4.
    发明申请
    USE OF CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING SUBSTANCE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 审中-公开
    化学机械抛光（CMP）组合物用于抛光物质或包含至少一种III-V材料的层

    公开(公告)号：WO2014184708A3

    公开(公告)日：2015-06-25

    申请号：PCT/IB2014061234

    申请日：2014-05-06

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a sub- strate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了化学机械抛光（CMP）组合物用于抛光含有一种或多种III-V材料的底层或层的用途，其中化学机械抛光（CMP）组合物包含以下组分：（A）表面 在2至6范围内的pH值（B）下，具有-15mV或更低的负ζ电位的改性二氧化硅颗粒（B）选自以下的一种或多种组分：（i）不具有芳环的取代和未取代的三唑 退火至三唑环，（ii）苯并咪唑，（iii）选自具有两个或多个羧基的氨基酸，脂族羧酸及其各自的盐的螯合剂，和（iv）丙烯酸的均聚物和共聚物 酸及其各自的盐，（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2至6的范围内。

    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    10.
    发明公开
    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 审中-公开
    用于化学机械抛光（CMP）的组合物的使用用于抛光衬底或层与至少一个III-V族材料

    公开(公告)号：EP2997104A4

    公开(公告)日：2017-01-25

    申请号：EP14797473

    申请日：2014-05-06

    Applicant: BASF SE

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了一种使用化学机械抛光用于抛光衬底或层包含一个或多个III-V族材料，worin的化学 - 机械抛光（CMP）组合物（CMP）组合物包含以下组分：（A）表面改性的二氧化硅 具有在pH为2至6（B）的范围为-15毫伏或低于负的Zeta电位的粒子的一种或多种组分选自（ⅰ）substituiertem和unsubstituiertem三唑不具有芳香环的选定退火以 三唑环，（II）苯并咪唑，（ⅲ）螯合剂选自具有两个或更多羧基基团，脂族羧酸，以及它们的respectivement盐的氨基酸由......组成，和（iv）的均聚物和丙烯酸的共聚物中选择剂， 和respectivement盐，（C）和水（D）任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围

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