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    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE
    1.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING POLYETHYLENE IMINE 审中-公开
    包含聚乙烯内酯的化学机械抛光组合物

    公开(公告)号：WO2014184703A2

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014061201

    申请日：2014-05-05

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 更多的聚乙烯亚胺（C）水（D）任选地一种或多种另外的组分，其中组合物的pH在2至6的范围内。

    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID
    2.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID 审中-公开
    包含N，N，N'，N'-四（2-羟基丙基） - 乙烯二胺或甲磺酸的化学机械抛光组合物

    公开(公告)号：WO2014184709A2

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014061236

    申请日：2014-05-06

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N',N'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了包含以下组分的化学机械抛光（CMP）组合物：（A）在2至6（B）N范围内的pH下具有-15mV或更低的ζ电位差的表面改性二氧化硅颗粒， N，N'，N'-四 - （2-羟丙基） - 乙二胺或甲磺酸（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2-6范围内。

    USE OF CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING SUBSTANCE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    4.
    发明申请
    USE OF CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING SUBSTANCE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 审中-公开
    化学机械抛光（CMP）组合物用于抛光物质或包含至少一种III-V材料的层

    公开(公告)号：WO2014184708A3

    公开(公告)日：2015-06-25

    申请号：PCT/IB2014061234

    申请日：2014-05-06

    Applicant: BASF SE ,  BASF CHINA CO LTD

    Inventor： LAN YONGQING ,  PRZYBYLSKI PETER ,  BAO ZHENYU ,  PRÖLSS JULIAN

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a sub- strate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了化学机械抛光（CMP）组合物用于抛光含有一种或多种III-V材料的底层或层的用途，其中化学机械抛光（CMP）组合物包含以下组分：（A）表面 在2至6范围内的pH值（B）下，具有-15mV或更低的负ζ电位的改性二氧化硅颗粒（B）选自以下的一种或多种组分：（i）不具有芳环的取代和未取代的三唑 退火至三唑环，（ii）苯并咪唑，（iii）选自具有两个或多个羧基的氨基酸，脂族羧酸及其各自的盐的螯合剂，和（iv）丙烯酸的均聚物和共聚物 酸及其各自的盐，（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2至6的范围内。

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    10.
    发明专利
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 未知

    公开(公告)号：SG11201700255UA

    公开(公告)日：2017-02-27

    申请号：SG11201700255U

    申请日：2015-07-14

    Applicant: BASF SE

    Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  PRÖLSS JULIAN ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA

    IPC: C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

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