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公开(公告)号：KR20200141064A
公开(公告)日：2020-12-17
申请号：KR20207031809
申请日：2019-03-25
Applicant: BASF SE
Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS , KLIPP ANDREAS , KE JHIH JHENG , CHENG YI PING
Abstract: 본원에는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한세정조성물및 상기세정조성물의상응하는용도가기재된다. 또한예를들어, 반도체기판의표면상의바람직하게는텅스텐재료의존재하에 TiN 을포함하는또는이것으로이루어진층 또는마스크의산화에칭또는부분산화에칭을위한및/또는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한, 하나이상의산화제와조합된상기세정조성물의용도가기재된다. 더욱이, 본발명의세정조성물및 하나이상의산화제를포함하는습식에칭조성물, 반도체기판의표면상의바람직하게는텅스텐재료의존재하에 TiN 을포함하는또는이것으로이루어진층 또는마스크의산화에칭또는부분산화에칭을위한및/또는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한상기습식에칭조성물의용도, 상기습식에칭조성물을사용하는반도체기판으로부터의반도체소자의제조방법및 본발명의세정조성물및 하나이상의산화제를포함하는키트가기재된다. 또한, 반도체기판의표면상의층 또는마스크의에칭또는부분에칭및/또는반도체기판의세정을위한조성물에서의이미다졸리딘티온의용도가기재된다.
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公开(公告)号：SG11202008782WA
公开(公告)日：2020-10-29
申请号：SG11202008782W
申请日：2019-03-25
Applicant: BASF SE
Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS , KLIPP ANDREAS , KE JHIH JHENG , CHENG YI PING
IPC: G03F7/42
Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.
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公开(公告)号：EP3143117A4
公开(公告)日：2018-03-28
申请号：EP15792549
申请日：2015-05-12
Applicant: BASF SE
Inventor： KE JERRY JHIH JHENG , YU TSE WEI , CHENG YI PING
IPC: C09K13/00 , C11D11/00 , H01L21/306 , H01L21/3213
CPC classification number: H01L21/02063 , C09K13/00 , C11D3/3723 , C11D3/3942 , C11D3/3947 , C11D7/263 , C11D7/32 , C11D7/34 , C11D7/5009 , C11D7/5013 , C11D11/0047 , C11D17/041 , H01L21/31111 , H01L21/31144 , H01L21/32134
Abstract: The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.
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