公开(公告)号：US20230340370A1

公开(公告)日：2023-10-26

申请号：US18042606

申请日：2021-08-16

Applicant: BASF SE

Inventor： Andreas KLIPP ,  Chia Wei CHANG ,  Meng Ju YU ,  Jhih Jheng KE ,  Cheng Shun CHEN

IPC: C11D3/43 ,  C11D3/30 ,  C11D3/04 ,  C11D3/39 ,  C11D11/00

CPC classification number: C11D3/3927 ,  C11D3/042 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047

Abstract: Disclosed herein is a composition for removing post-etch residues in the presence of a layer comprising silicon and a dielectric layer including a silicon oxide, the composition including:

(a) 0.005 to 0.3 % by weight HF;
(b) 0.01 to 1 % by weight of an ammonium fluoride of formula NRE4F, where RE is H or a C1 to C4 alkyl group;
(c) 5 to 30 % by weight of an organic solvent selected from the group consisting of a sulfoxide and a sulfone;
(d) 70 % by weight or more water, and
(e) optionally 0.01 to 1 % by weight of an ammonium compound selected from the group consisting of ammonia and a C4 to C20 quaternized aliphatic ammonium.