公开(公告)号：US20230167381A1

公开(公告)日：2023-06-01

申请号：US16762275

申请日：2018-11-26

Applicant: BASF SE

Inventor： I Chen CHOU ,  Andreas KLIPP ,  Berthold FERSTL

IPC: C11D1/83 ,  C11D11/00 ,  G03F7/40 ,  H01L21/02

CPC classification number: C11D1/83 ,  C11D11/0047 ,  G03F7/40 ,  H01L21/02057 ,  C11D1/004

Abstract: Described is a composition comprising as primary surfactant an ionic compound comprising one or more fluoroalkyl groups and as secondary surfactant at least one non-ionic compound comprising one or more polyalkyloxy and/or polyalkylenoxy groups, for cleaning or rinsing a product, preferably a product used in the semiconductor industry, and a respective use of said composition. Further described is a method of making a cleaned or rinsed product, preferably a product used in the semiconductor industry, comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below, comprising the step of cleaning or rinsing said product with the composition of the invention.

公开(公告)号：US20190144781A1

公开(公告)日：2019-05-16

申请号：US16307191

申请日：2017-05-31

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Leonardus LEUNISSEN ,  Ivan GARCIA ROMERO ,  Haci Osman GUEVENC ,  Peter PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP

IPC: C11D1/72 ,  C11D1/722 ,  C11D11/00 ,  C11D3/37 ,  H05K3/26

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：US20230340370A1

公开(公告)日：2023-10-26

申请号：US18042606

申请日：2021-08-16

Applicant: BASF SE

Inventor： Andreas KLIPP ,  Chia Wei CHANG ,  Meng Ju YU ,  Jhih Jheng KE ,  Cheng Shun CHEN

IPC: C11D3/43 ,  C11D3/30 ,  C11D3/04 ,  C11D3/39 ,  C11D11/00

CPC classification number: C11D3/3927 ,  C11D3/042 ,  C11D3/30 ,  C11D3/43 ,  C11D11/0047

Abstract: Disclosed herein is a composition for removing post-etch residues in the presence of a layer comprising silicon and a dielectric layer including a silicon oxide, the composition including:

(a) 0.005 to 0.3 % by weight HF;
(b) 0.01 to 1 % by weight of an ammonium fluoride of formula NRE4F, where RE is H or a C1 to C4 alkyl group;
(c) 5 to 30 % by weight of an organic solvent selected from the group consisting of a sulfoxide and a sulfone;
(d) 70 % by weight or more water, and
(e) optionally 0.01 to 1 % by weight of an ammonium compound selected from the group consisting of ammonia and a C4 to C20 quaternized aliphatic ammonium.

公开(公告)号：US20190002802A1

公开(公告)日：2019-01-03

申请号：US16064686

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Piotr PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  H01L21/321 ,  H01L21/02

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：US20180371371A1

公开(公告)日：2018-12-27

申请号：US16064918

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Peter PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D3/37 ,  C11D3/00 ,  C11D11/00

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition including: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of the polymers thereof, and (C) water, where the pH of the composition is from 7.0 to 10.5.

公开(公告)号：US20250109332A1

公开(公告)日：2025-04-03

申请号：US18730148

申请日：2023-02-13

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Chih Hui LO ,  Andreas KLIPP ,  Mei Chin SHEN ,  Sven HILDEBRANDT

IPC: C09K13/00 ,  H01L21/306

Abstract: Disclosed herein is a composition for selectively etching a silicon germanium (SiGe) layer in the presence of a silicon layer, the composition including: (a) 1 to 10% by weight of an oxidizing agent; (b) 1 to 14% by weight of an etchant comprising a source of fluoride ions; (c) 0.001 to 3% by weight of a selectivity enhancer of formula S1 (d) 0.001 to 3% by weight of an additional selectivity enhancer of formula S31 and (e) water.

公开(公告)号：US20210301221A1

公开(公告)日：2021-09-30

申请号：US16767336

申请日：2018-12-05

Applicant: BASF SE

Inventor： Jhih Jheng KE ,  Andreas KLIPP ,  Yi Ping CHENG ,  Joannes Theodorus Valentinus HOOGBOOM

IPC: C11D3/24 ,  C11D3/30 ,  C11D3/34 ,  C11D3/00 ,  C11D11/00 ,  C11D3/20 ,  H01L21/02

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

公开(公告)号：US20210166934A1

公开(公告)日：2021-06-03

申请号：US17044928

申请日：2019-04-02

Applicant: BASF SE

Inventor： Andreas KLIPP ,  Christian BITTNER ,  Simon BRAUN ,  Guenter OETTER ,  Yeni BURK

IPC: H01L21/02 ,  C07C271/12

Abstract: The use of an organic compound as cleavable additive, preferably as cleavable surfactant, in the modification and/or treatment of at least one surface of a semiconductor substrate is described. Moreover, it is described a method of making a semiconductor substrate, comprising contacting at least one surface thereof with an organic compound, or with a composition comprising it, to treat or modify said surface, cleaving said organic compound into a set of fragments and removing said set of fragments from the contacted surface. More in particular, a method of cleaning or rinsing a semiconductor substrate or an intermediate semiconductor substrate is described. In addition, a compound is described which is suitable for the uses and methods pointed out above and which preferably is a cleavable surfactant.

公开(公告)号：US20240093089A1

公开(公告)日：2024-03-21

申请号：US18519571

申请日：2023-11-27

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Jhih Jheng KE ,  Che Wei WANG ,  Andreas KLIPP ,  Yi Ping CHENG

IPC: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/311

CPC classification number: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/31111

Abstract: A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.

公开(公告)号：US20210189298A1

公开(公告)日：2021-06-24

申请号：US17044989

申请日：2019-03-25

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Andreas KLIPP ,  Jhih Jheng KE ,  Yi Ping CHEN

IPC: C11D7/34 ,  G03F7/42 ,  C11D11/00 ,  C11D7/50 ,  C11D7/26 ,  C11D7/32 ,  C09K13/00

Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.