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公开(公告)号：WO2010084033A3
公开(公告)日：2012-01-26
申请号：PCT/EP2010050078
申请日：2010-01-06
Applicant: BASF SE , KLIPP ANDREAS , HUNG TING HSU , SU KUOCHEN , TU SHENG-HUNG
Inventor： KLIPP ANDREAS , HUNG TING HSU , SU KUOCHEN , TU SHENG-HUNG
CPC classification number: C11D7/3209 , C11D7/04 , C11D7/263 , C11D7/3281 , C11D7/34 , C11D7/5004 , C11D7/5022 , C11D11/0047 , H01L21/02074
Abstract: The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
Abstract translation: 本发明涉及用于后化学机械抛光（CMP）清洗的组合物。 该组合物是碱性的，其可以在CMP之后去除晶片表面上的唑类腐蚀抑制剂。 该组合物可有效去除唑化合物，增加Cu表面的润湿性，并显着改善CMP后的缺陷去除。
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公开(公告)号：SG172360A1
公开(公告)日：2011-08-29
申请号：SG2011046331
申请日：2010-01-06
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HUNG TING HSU , SU KUOCHEN , TU SHENG-HUNG
Abstract: The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
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