公开(公告)号：EP3166949A4

公开(公告)日：2018-04-11

申请号：EP15819160

申请日：2015-07-07

Applicant: BASF SE

Inventor： MCCULLOCH IAIN ,  MEAGER IAIN ,  SCHROEDER BOB ,  HAYOZ PASCAL ,  FLORES JEAN CHARLES ,  MATHAUER KLEMENS ,  BUJARD PATRICE ,  KAELBLEIN DANIEL

IPC: C08G61/12 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/314 ,  C08G2261/3223 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/411 ,  C08G2261/414 ,  C08G2261/512 ,  C08G2261/514 ,  C08G2261/516 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/95 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/0558

Abstract: Disclosed are polymers comprising at least one unit of formula (1), a process for their preparation, intermediates and electronic devices comprising these polymers as semiconducting material.

公开(公告)号：EP3198614A4

公开(公告)日：2018-04-04

申请号：EP15845021

申请日：2015-08-13

Applicant: BASF SE

Inventor： MARTIN EMMANUEL ,  BRUNETTI FULVIO G ,  ZHOU MI ,  BECKER STEFAN ,  KAELBLEIN DANIEL ,  WU CHAO ,  PRAPTANA RAIMOND ,  KNOLL KONRAD ,  KOPPING JORDAN THOMAS

IPC: C08F112/14 ,  C08F212/14

CPC classification number: H01L51/052 ,  C08F12/20 ,  C08F12/22 ,  C08F12/32 ,  C08F112/14 ,  C08F212/14 ,  C09D125/18 ,  H01L51/004 ,  H01L51/0043 ,  C08F212/32

Abstract: Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0,1,2,3,4,5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar 1 and Ar 2 are independently from each other C 6-14-arylene or C 6-14-aryl,which may be substituted with 1 to 4 substituents independently selected from the group consisting of C 1-30-alkyl, C 2-30-alkenyl, C 2-30-alkynyl, C 5-8-cycloalkyl, C 6-14-aryl and 5 to 14 membered heteroaryl, and X 1,X 2 and X 3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.