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公开(公告)号：WO2014184703A3
公开(公告)日：2014-11-20
申请号：PCT/IB2014/061201
申请日：2014-05-05
Applicant: BASF SE , BASF (CHINA) COMPANY LIMITED
Inventor： LAN, Yongqing , PRZYBYLSKI, Peter , BAO, Zhenyu , PRöLß, Julian
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
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2.发明申请USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开化学机械抛光（CMP）组合物用于抛光包含基材的钴和/或钴合金的用途
公开(公告)号：WO2017162462A1
公开(公告)日：2017-09-28
申请号：PCT/EP2017/055826
申请日：2017-03-13
Applicant: BASF SE
Inventor： LAUTER, Michael , GUEVENC, Haci Osman , SIEBERT, Max , LAN, Yongqing , USMAN IBRAHIM, Sheik Ansar , GOLZARIAN, Reza M. , WEI, Te Yu
IPC: C09G1/04
Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.
Abstract translation: 化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基材（S）的化学机械抛光的用途，其中所述CMP组合物 （Q）包含（A）无机颗粒（B），聚氨基酸和/或其盐（C）至少一种氨基酸，（D）至少一种氧化剂（E），水性介质，并且其中所述CMP组合物 （Q）的pH值为7-10。
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3.发明申请USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES 审中-公开使用化学机械抛光（CMP）组合物，用于抛光包含衬底的钴
公开(公告)号：WO2017025536A1
公开(公告)日：2017-02-16
申请号：PCT/EP2016/068964
申请日：2016-08-09
Applicant: BASF SE
Inventor： REICHARDT, Robert , SIEBERT, Max , LAN, Yongqing , LAUTER, Michael , USMAN IBRAHIM, Sheik Ansar , GOLZARIAN, Reza M. , WEI, Te Yu , GUEVENC, Haci Osman , PROELSS, Julian , LEUNISSEN, Leonardus
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包括（i）钴和/或（ii）钴合金和（iii）TiN和/或TaN的基底（S）的化学机械抛光，其中 CMP组合物（Q）包含（E）无机颗粒（F）至少一种包含氨基和酸基（Y）的有机化合物，其中所述化合物包含n个氨基和至少n + 1个酸性质子，其中n （G）至少一种氧化剂，其量相对于相应的CMP组合物的总重量为0.2至2.5重量％，（H）其中CMP组合物（Q）具有的水性介质 pH大于6且小于9。
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公开(公告)号：WO2015008193A1
公开(公告)日：2015-01-22
申请号：PCT/IB2014/062940
申请日：2014-07-08
Applicant: BASF SE , BASF (CHINA) COMPANY LIMITED
Inventor： LAUTER, Michael , NOLLER, Bastian Marten , LANGE, Roland , REICHARDT, Robert , LAN, Yongqing , BOYKO, Volodymyr , KRAUS, Alexander , SEYERL, Joachim von , USMAN IBRAHIM, Sheik Ansar , SIEBERT, Max , HARTNAGEL, Kristine , DENGLER, Joachim , HILLESHEIM, Nina Susanne
CPC classification number: C09G1/02 , C09D5/027 , C09D7/65 , C09K3/1463 , H01L21/30625 , H01L21/31053
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.
Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。
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公开(公告)号：WO2022122520A1
公开(公告)日：2022-06-16
申请号：PCT/EP2021/083866
申请日：2021-12-02
Applicant: BASF CORPORATION [US]/[US] , BASF SE [DE]/[DE] (KN)
Inventor： OSCHMANN, Bernd Dieter , LE, Duy Minh , LAN, Yongqing , KATZ, Britta , HERMANN, Olga , BAUMGAERTNER, Timo , BUMMEL, Tobias
Abstract: A microparticle composition comprising a fungicide F, wherein fungicide F is present in the form of microparticles which is surrounded or embedded by an aminoplast polymer, which is a polycondensation product of one or more amino compounds and one or more aldehydes.
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Patent Agency Ranking6.发明申请USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND/OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开使用化学机械抛光（CMP）组合物，用于抛光包含衬底的钴和/或钴合金
公开(公告)号：WO2016102531A1
公开(公告)日：2016-06-30
申请号：PCT/EP2015/080913
申请日：2015-12-22
Applicant: BASF SE
Inventor： REICHARDT, Robert , SIEBERT, Max , LAN, Yongqing , LAUTER, Michael , USMAN IBRAHIM, Sheik Ansar , GOLZARIAN, Reza , GUEVENC, Haci Osman , PROELSS, Julian , LEUNISSEN, Leonardus
IPC: C09G1/00
CPC classification number: C09G1/02 , B24B37/20 , C09K3/1409 , C23F3/06 , H01L21/3212 , H01L21/7684
Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.
Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基底（S）的化学机械抛光，其中所述CMP组合物（Q）包含（A）无机 颗粒，（B）具有至少一种羧酸作为缓蚀剂的取代芳族化合物，（C）至少一种氨基酸，（D）至少一种氧化剂，（E）水性介质，其中所述CMP组合物 ）的pH为7〜10。
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7.发明申请CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR HIGH EFFECTIVE POLISHING OF SUBSTRATES COMPRISING GERMANIUM 审中-公开化学机械抛光（CMP）组合物，用于高效地抛光包含锗的基材
公开(公告)号：WO2016097915A1
公开(公告)日：2016-06-23
申请号：PCT/IB2015/059351
申请日：2015-12-04
Applicant: BASF SE , BASF (CHINA) COMPANY LIMITED
Inventor： SIEBERT, DR., Max , LAUTER, DR., Michael , LAN, Yongqing , REICHARDT, DR., Robert , MUENCH, Alexandra , SIX, Manuel , DANIEL, Gerald , NOLLER, DR., Bastian Marten , HUANG, Kevin , USMAN IBRAHIM, Sheik Ansar
CPC classification number: C09G1/04 , C09G1/02 , C09K13/00 , H01L21/304 , H01L21/461
Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising: (A) inorganic particles, (B) a compound of general formula (I) (C) an aqueous medium wherein the composition (Q) has a pH of from 2 to 6.
Abstract translation: 一种化学机械抛光（CMP）组合物（Q），其包含：（A）无机颗粒，（B）通式（I）的化合物（C）水性介质，其中所述组合物（Q）的pH为2至6 。
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公开(公告)号：WO2014184709A3
公开(公告)日：2014-11-20
申请号：PCT/IB2014/061236
申请日：2014-05-06
Applicant: BASF SE , BASF (CHINA) COMPANY LIMITED
Inventor： LAN, Yongqing , PRZYBYLSKI, Peter , BAO, Zhenyu , PRÖLß, Julian
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N',N'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
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9.发明申请PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开从基板上移除大块材料层的方法和适用于本工艺的化学机械抛光剂
公开(公告)号：WO2011064734A1
公开(公告)日：2011-06-03
申请号：PCT/IB2010/055426
申请日：2010-11-25
Applicant: BASF SE , RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
Inventor： RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo
IPC: H01L21/463 , C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, - an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.
Abstract translation: （1）提供在化学机械抛光结束时显示的CMP试剂，而不添加补充材料，与其开始时相同的SER的方法，用于从基底去除体材料层并通过CMP平坦化暴露表面的方法 和比开始时更低的MRR， - 低于初始SER的SER，和与初始MRR相同或基本相同的MRR，或比开始时更低的SER和较低的MRR; （2）使本体材料层的表面与CMP剂接触; （3）散装材料层的CMP与CMP剂; 和（4）继续CMP，直到从暴露表面去除所有材料残留物; 和CMP剂及其用于制造电气和光学器件的用途。
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公开(公告)号：WO2019238761A1
公开(公告)日：2019-12-19
申请号：PCT/EP2019/065359
申请日：2019-06-12
Applicant: BASF SE
Inventor： SCHMIDT-HANSBERG, Benjamin , SCHROEDER, Andreas , LAN, Yongqing , SEYFRIED, Thomas , KUEBELBECK, Sonja , BAIER, Grit , FUCHS, Yannick , WAGNER, Aaron , ARNDT, Matthias , DETERING, Juergen
Abstract: The present invention relates to water-soluble multilayer films containing wash active chemicals and enzymes, their production and use.
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