TERTIARY AMINES FOR REDUCING INJECTOR NOZZLE FOULING AND MODIFYING FRICTION IN DIRECT INJECTION SPARK IGNITION ENGINES
    6.
    发明申请
    TERTIARY AMINES FOR REDUCING INJECTOR NOZZLE FOULING AND MODIFYING FRICTION IN DIRECT INJECTION SPARK IGNITION ENGINES 有权
    用于减少注射器喷嘴和修改直接喷射摩擦的燃料喷雾点火机

    公开(公告)号:US20140123547A1

    公开(公告)日:2014-05-08

    申请号:US14071814

    申请日:2013-11-05

    Applicant: BASF SE

    Inventor: Marc WALTER

    Abstract: Use of a tertiary hydrocarbyl amine with C1- to C20-hydrocarbyl residues, the overall number of carbon atoms not exceeding 30, as an additive in gasoline for reducing injector nozzle fouling and modifying friction in direct injection spark ignition engines. A fuel additive composition essentially comprising nitrogen-containing dispersants, carrier oils, the above tertiary hydrocarbyl amines and optionally further friction modifiers. A fuel composition comprising a major amount of gasoline and a minor amount of the above fuel additive composition.

    Abstract translation: 使用叔烃基胺与C 1 -C 20烃基残基(总碳原子数不超过30)作为汽油中的添加剂,用于减少喷射器喷嘴结垢并改变直接喷射火花点火发动机中的摩擦。 一种燃料添加剂组合物,其基本上包含含氮分散剂,载体油,上述叔烃基胺和任选的其它摩擦改进剂。 包含主要量的汽油和少量上述燃料添加剂组合物的燃料组合物。

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS

    公开(公告)号:US20190144999A1

    公开(公告)日:2019-05-16

    申请号:US16092577

    申请日:2017-04-10

    Applicant: BASF SE

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a σ-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.

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