公开(公告)号：US20170362464A1

公开(公告)日：2017-12-21

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  B24B37/20 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/461 ,  H01L21/463 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20200294813A1

公开(公告)日：2020-09-17

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: H01L21/321 ,  C09K3/14 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20170022107A1

公开(公告)日：2017-01-26

申请号：US15113589

申请日：2015-01-16

Applicant: BASF SE

Inventor： Max SIEBERT ,  Andreas KEMPTER ,  Christoph HESSE ,  Niklas LOGES ,  Rebecca SCHMITT

IPC: C04B22/14 ,  C04B28/16 ,  C04B24/26 ,  C01F11/46

CPC classification number: C04B22/143 ,  C01F11/46 ,  C04B24/2694 ,  C04B28/146 ,  C04B28/16 ,  C04B28/165 ,  C04B40/0042 ,  C04B2103/14 ,  C04B2111/0062 ,  C04B2111/62 ,  C04B2111/72 ,  C04B24/163 ,  C04B24/246 ,  C04B24/2647 ,  C04B24/267 ,  C04B24/2658 ,  C04B22/0086

Abstract: The invention concerns a method for producing pulverulent hardening accelerators by reactive spray drying, where an aqueous phase I comprising calcium ions, and an aqueous phase II comprising sulphate ions, the molar ratio of the calcium ions to the sulphate ions being from 1/5 to 5/1, are contacted at a spray nozzle, and the phases I and II contacted with one another at the spray nozzle are sprayed in a streaming environment of drying gas. Likewise concerned are the pulverulent hardening accelerators producible by the method of the invention, and their use for accelerating the hardening of bassanite and/or anhydrite with formation of gypsum.

Abstract translation: 本发明涉及通过反应性喷雾干燥制备粉末硬化促进剂的方法，其中包含钙离子的水相I和包含硫酸根离子的水相II，钙离子与硫酸根离子的摩尔比为1/5至 5/1在喷嘴处接触，并且在喷雾喷嘴处彼此接触的相I和II在干燥气体的流动环境中喷雾。 同样关心的是通过本发明的方法可生产的粉末硬化促进剂及其用于加速形成石膏的巴生石和/或无水石膏的硬化的用途。

公开(公告)号：US20210102093A1

公开(公告)日：2021-04-08

申请号：US17123685

申请日：2020-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

公开(公告)号：US20170158913A1

公开(公告)日：2017-06-08

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US20190144781A1

公开(公告)日：2019-05-16

申请号：US16307191

申请日：2017-05-31

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Leonardus LEUNISSEN ,  Ivan GARCIA ROMERO ,  Haci Osman GUEVENC ,  Peter PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP

IPC: C11D1/72 ,  C11D1/722 ,  C11D11/00 ,  C11D3/37 ,  H05K3/26

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：US20180230333A1

公开(公告)日：2018-08-16

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M. GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/461 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20180016468A1

公开(公告)日：2018-01-18

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US20170166778A1

公开(公告)日：2017-06-15

申请号：US15115747

申请日：2015-01-21

Applicant: BASF SE

Inventor： Michael LAUTER ,  Roland LANGE ,  Bastian Marten NOLLER ,  Max SIEBERT

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/76224

Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.

公开(公告)号：US20200299547A1

公开(公告)日：2020-09-24

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.