公开(公告)号：CA2682928A1

公开(公告)日：2008-10-30

申请号：CA2682928

申请日：2008-04-10

Applicant: BASF SE

Inventor： WALTER HARALD ,  VON MUHLENEN ADRIAN ,  BURGI LUKAS ,  PFEIFFER RETO

IPC: H01L21/027 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/42

Abstract: The invention relates to a method for forming a pattern on a substrate (S ) with an upper surface and a lower surface which comprises the steps of dep ositing a first layer (E1) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E1), expos ing the photosensitive layer (R) to a light beam (L), the light beam (L) imp inging on the lower surface of the substrate (S) under an oblique angle (.PH I.) of incidence, removing the exposed region of the photosensitive layer (R ), depositing a second layer (E2) of an opaque material such that part of th e second layer (E2) covers a remaining region of the photosensitive layer (R ), and removing at least a part of the remaining region of the photosensitiv e layer (R). According to another aspect of the method of the invention anis otropic plasma etching is applied from above the upper surface of the substr ate (S) after removal of the exposed region of the photosensitive layer (R) and thereafter the second layer (E2) is deposited. The method of the inventi on can be applied for forming a source electrode and a drain electrode of a thin-film field effect transistor. The invention furthermore relates to an e lectronic device fabricated by such a method.