Abstract:
The present invention relates to an organic light-emitting diode which has a light-emitting layer C which contains at least one hole-conducting material CA and at least one phosphorescence emitter CB, mixtures containing at least one carbene complex in combination with at least one hole-conducting material or in combination with at least one phosphorescence emitter, and the use of mixtures containing at least one hole-conducting material and at least one phosphorescence emitter as a light-emitting layer in OLEDs for extending the lifetime of the light-emitting layer. The organic light-emitting diode according to the invention can have in at least one of the layers of the organic light-emitting diode, preferably in the hole-blocking layer and/or the electron-blocking layer and/or the light-emitting layer C, in addition to the hole-conducting material CA and the emitter CB, at least one compound selected from disilylcarbazoles, disilyldibenzofurans, disilyldibenzothiophenes, disilyldibenzophospholes, disilyldibenzothiophene-S-oxides and disilyldibenzothiophene-S,S-dioxides.
Abstract:
Disclosed is use of dibenzofurans and dibenzothiophenes which have at least one nitrogen-bonded five-membered heterocyclic ring as substituent as host, blocker, and /or charge transport material in organic electronics. Dibenzofurans and dibenzothiophenes which comprise at least one nitrogen-bonded five-membered heterocyclic ring and at least one carbazolyl radical as substituents, a preparation process thereof, and use of these compounds in organic electronics are also disclosed.
Abstract:
Silanes comprising phenothiazine S-oxide or phenothiazine S,S-dioxide groups, organic light-emitting diodes comprising the inventive silanes, a light-emitting layer comprising at least one inventive silane and at least one triplet emitter, a process for preparing the inventive silanes and the use of the inventive silanes in organic light-emitting diodes, preferably as matrix materials and/or blocker materials for triplet emitters.
Abstract:
The present invention relates to the use of transition metal-carbene complexes in organic light-emitting diodes (OLEDs), to a light-emitting layer, to a blocking layer for electrons or excitons, or to a blocking layer for holes, each comprising these transition metal-carbene complexes, to OLEDs comprising these transition metal-carbene complexes, to devices which comprise an inventive OLED, and to transition metal-carbene complexes.
Abstract:
The present invention relates to heteroleptic carbene complexes comprising at least two different carbene ligands, to a process for preparing the heteroleptic carbene complexes, to the use of the heteroleptic carbene complexes in organic light-emitting diodes, to organic light-emitting diodes comprising at least one inventive heteroleptic carbene complex, to a light-emitting layer comprising at least one inventive heteroleptic carbene complex, to organic light-emitting diodes comprising at least one inventive light-emitting layer, and to devices which comprise at least one inventive organic light-emitting diode.
Abstract:
The present invention relates to the use of transition metal-carbene complexes in organic light-emitting diodes (OLEDs), to a light-emitting layer, to a blocking layer for electrons or excitons, or to a blocking layer for holes, each comprising these transition metal-carbene complexes, to OLEDs comprising these transition metal-carbene complexes, to devices which comprise an inventive OLED, and to transition metal-carbene complexes.