Abstract:
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and R N is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R 1 , R 2 , R 3 , and R 4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.
Abstract:
Die vorliegende Erfindung bezieht sich auf die Herstellung von ϒ-Cäsium-Zinn-Iodid aus einer Cäsium-Zinn-Iodid-Lösung, wobei das Lösungsmittel abgedampft und das Cäsium-Zinn-Iodid anschließend thermisch behandelt wird, sowie auf einen lösungsmittelbasierten Auftrag von ϒ-Cäsium-Zinn-Iodid, Cs 1-x A x B 1-y C y I 3 , Bi 1-x MI 3-y X y oder Bismuthiodid auf ein Substrat und die Verwendung als Halbleitermaterial in Transistorstrukturen, wobei eine CsSnI 3 -Lösung, eine Cs 1-x A x B 1-y C y I 3-z X z -Lösung, eine Bi 1-x M x I 3-y X y -Lösung oder eine BiI 3 -Lösung auf ein Substrat mit Hilfe von Drucktechniken aufgebracht wird, wobei unter Verwendung von einer CsSnI 3 -Lösung der Auftrag unter inerter Atmosphäre und/oder Vakuum durchgeführt wird.
Abstract:
The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process for producing a silicon-containing film comprising depositing the compound of general formula (I) or (II) onto a solid substrate, wherein R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is an olefinic or aromatic group forming a π bond to the silicon atom, Z is a neutral ligand, and n is 1 or 2.
Abstract:
The invention relates to a process for switching an electrochromic cell (100) comprising at least a first electrode layer (106) and a second electrode layer (108) each capable of reversibly inserting ions. Further the cell (100) comprises an ion-conducting layer (110) that separates the first electrode layer (106) and the second electrode layer (108) and a temperature sensor (216) for measuring a temperature (T) in or on or in the vicinity of the electrochromic cell (100). Moreover, a first contact member (101) is electronically connected with the first electrode layer (106) and a second contact member (102) is electronically connected with the second electrode layer (108), wherein the first (106) and the second electrode layer (108) are counter electrodes to each other. Furthermore, at least said first electrode layer (106) comprises an organic polymer matrix and dispersed within said organic polymer matrix an electrochromic material, electronically conductive nanoobjects (112) and an electrolyte (114) dissolved in a solvent. Further, the process comprises to measure the current (iC) flowing through the cell (100) if a voltage (U C ) is applied to the electrode layers (106, 108), and applying a voltage (U C ) to contact members (101, 102) and varying the applied voltage (UC) as a function of current (iC), such that the voltage (U C ) generated between the electrode layers (106, 108) is kept within predetermined temperature (T) dependent safe redox limits and such that the cell current (i C ) is limited to predetermined temperature-dependent limits. Moreover, the applied voltage (U C ) is only increased if the cell current (i C ) is less than a maximum cell current (i max ), determined according to: i max = j max x Area + (T-T 0 ) x F, where j max is a predetermined maximum current density, Area is the active cell area, T is the temperature of the electrochromic cell (100) measured with the temperature sensor (216), T 0 is a reference temperature, and F a factor. Further, the invention relates to an apparatus (200) and a system (300) for performing the process.
Abstract:
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal-containing films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C 2 -C 4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
Abstract:
Described are compositions comprising dispersed nanoobjects, processes for preparing a layer comprising such nanoobjects on a surface of a solid substrate and articles comprising such layers.
Abstract:
The present invention relates to organic-inorganic tandem solar cells. In particular the present invention relates to solar cells comprising the following layers in the following order: a metal layer (10), a n-doped crystalline silicon layer (20), a p-doped crystalline silicon layer (30), an electron-conducting layer (40), a perovskite layer (50), a hole-conducting layer (60), and a transparent conductor layer (70).
Abstract:
The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R 1 NR 2 3 ) 5 Me X 1 a X 2 b wherein R 1 is C 1 -C 4 -alkyl, R 2 are independently of one another hydrogen or C 1 -C 4 -alkyl, Me is a divalent metal, X 1 and X 2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.
Abstract:
Die vorliegende Erfindung betrifft eine Tintenzusammensetzung zum Drucken von halbleitenden Filmen enthaltend (i) mindestens eine Kupferverbindung, (ii) mindestens eine Zinkverbindung, (iii) mindestens eine Zinnverbindung, (iv) mindestens eine Schwefel- und/oder Selenverbindung und (v) mindestens einen flüssigen aliphatischen Ether-Alkohol, Carbonsäure und/oder Wasser. Ferner betrifft die vorliegende Erfindung halbleitende Dünnschicht-Filme und daraus hergestellte elektronische Bauteile, sowie deren Verwendung in der Photovoltaik.