公开(公告)号：US20210301221A1

公开(公告)日：2021-09-30

申请号：US16767336

申请日：2018-12-05

Applicant: BASF SE

Inventor： Jhih Jheng KE ,  Andreas KLIPP ,  Yi Ping CHENG ,  Joannes Theodorus Valentinus HOOGBOOM

IPC: C11D3/24 ,  C11D3/30 ,  C11D3/34 ,  C11D3/00 ,  C11D11/00 ,  C11D3/20 ,  H01L21/02

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

公开(公告)号：US20240093089A1

公开(公告)日：2024-03-21

申请号：US18519571

申请日：2023-11-27

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Jhih Jheng KE ,  Che Wei WANG ,  Andreas KLIPP ,  Yi Ping CHENG

IPC: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/311

CPC classification number: C09K13/00 ,  C07D265/30 ,  C23F1/20 ,  C23F1/44 ,  H01L21/31111

Abstract: A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.

公开(公告)号：US20200339523A1

公开(公告)日：2020-10-29

申请号：US16765371

申请日：2018-12-05

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Jhih Jheng KE ,  Che Wei WANG ,  Andreas KLIPP ,  Yi Ping CHENG

IPC: C07D265/30 ,  C23F1/44 ,  C23F1/20 ,  H01L21/311

Abstract: A composition for selectively etching a layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt is described, and a corresponding use of said composition. Further is described a process for the manufacture of a semiconductor device, comprising the step of selectively etching at least one layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt by contacting the at least one layer comprising an aluminium compound with the described composition.