公开(公告)号：WO2007025032A2

公开(公告)日：2007-03-01

申请号：PCT/US2006033058

申请日：2006-08-24

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX A ,  LENTH WILFRIED

IPC: H01L33/00 ,  G11B7/125

CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length l c and width b m . Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length l s and width b s of the chip can be selected as convenient values equal to or longer than the waveguide length l c and mesa width b m , respectively. The waveguide length and width are selected so that for a given defect density D, the yield Y D is larger than 50%.

Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b 作为等于或长于波导长度l1c和台面的方便值 宽度b 。 选择波导长度和宽度，使得对于给定的缺陷密度D，产率Y D大于50％。