公开(公告)号：AU2003217804A8

公开(公告)日：2003-09-09

申请号：AU2003217804

申请日：2003-02-25

Applicant: BREWER SCIENCE INC

Inventor： DAFFRON MARK G ,  SHIH WU-SHENG ,  SNOOK JULIET ANN MINZEY ,  LAMB JAMES E

IPC: G03F7/11 ,  B81C1/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/44

公开(公告)号：CA2462347A1

公开(公告)日：2003-04-17

申请号：CA2462347

申请日：2002-10-10

Applicant: BREWER SCIENCE INC

Inventor： SHIH WU-SHENG ,  DAFFRON MARK G ,  LAMB JAMES E III

IPC: B29C33/40 ,  B29C33/38 ,  B29C33/42 ,  B29C33/62 ,  B29C59/02 ,  B29K27/12 ,  B81C1/00 ,  G03F7/00 ,  G11B5/855 ,  H01L21/027 ,  B44B5/00

Abstract: Nonstick molds (16) and method of forming and using such molds are provided. The molds are formed of a nonstick material such as those selected from the group consisting of fluoropolymers, fluorinated siloxane polymers, silicones , and mixtures thereof. The nonstick mold is imprinted with a negative image o f a master mold, where the master mold is designed to have a topography patter n corresponding to that desired surface on the surface of a microelectronic substrate. The nonstick mold (16) is then used to transfer the pattern or image (18) to a flowable film (20) on the substrate (22) surface. This film is subsequently cured or hardened, resulting in the desired pattern (26) ready for further processing.

公开(公告)号：AU2003217804A1

公开(公告)日：2003-09-09

申请号：AU2003217804

申请日：2003-02-25

Applicant: BREWER SCIENCE INC

Inventor： SNOOK JULIET ANN MINZEY ,  SHIH WU-SHENG ,  LAMB JAMES E ,  DAFFRON MARK G

IPC: G03F7/11 ,  B81C1/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3205

公开(公告)号：EP1485949A4

公开(公告)日：2007-04-25

申请号：EP03713770

申请日：2003-02-25

Applicant: BREWER SCIENCE INC

Inventor： SHIH WU-SHENG ,  LAMB JAMES E III ,  DAFFRON MARK G ,  SNOOK JULIET ANN MINZEY

IPC: G03F7/00 ,  G03F7/11 ,  B81C1/00 ,  G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3205

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/094 ,  G03F7/095 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31144 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: The present invention is directed towards contact planarization methods that can be used to planarize substrate (32) surfaces having a wide range of topographic feature (34) densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces (38) over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.