公开(公告)号：AU2002259251A1

公开(公告)日：2002-12-16

申请号：AU2002259251

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  HUANG RUNHUI ,  FLAIM TONY D ,  PULIGADDA RAMA ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  B05D3/02 ,  C08F8/32 ,  C08G59/16 ,  C08F120/32 ,  C08G59/14 ,  C08F8/00 ,  C08F8/14

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

公开(公告)号：AU5433890A

公开(公告)日：1990-11-05

申请号：AU5433890

申请日：1990-03-30

Applicant: BREWER SCIENCE INC

Inventor： BREWER TERRY ,  FLAIM TONY ,  LAMB JAMES E III ,  BARNES GREGG A

IPC: C08G73/10 ,  C08L63/00 ,  G03F7/09 ,  G03C5/00 ,  G03C1/492 ,  G03C5/12

公开(公告)号：AU2002347880A1

公开(公告)日：2003-04-22

申请号：AU2002347880

申请日：2002-10-10

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  SHIH WU-SHENG ,  DAFFRON MARK

IPC: B29C33/40 ,  B29C33/38 ,  B29C33/42 ,  B29C33/62 ,  B29C59/02 ,  B29K27/12 ,  B81C1/00 ,  G03F7/00 ,  G11B5/855 ,  H01L21/027 ,  B44B5/00

Abstract: Novel nonstick molds and methods of forming and using such molds are provided. The molds are formed of a nonstick material such as those selected from the group consisting of fluoropolymers, fluorinated siloxane polymers, silicones, and mixtures thereof. The nonstick mold is imprinted with a negative image of a master mold, where the master mold is designed to have a topography pattern corresponding to that desired on the surface of a microelectronic substrate. The nonstick mold is then used to transfer the pattern or image to a flowable film on the substrate surface. This film is subsequently cured or hardened, resulting in the desired pattern ready for further processing.

公开(公告)号：CA2462347A1

公开(公告)日：2003-04-17

申请号：CA2462347

申请日：2002-10-10

Applicant: BREWER SCIENCE INC

Inventor： SHIH WU-SHENG ,  DAFFRON MARK G ,  LAMB JAMES E III

IPC: B29C33/40 ,  B29C33/38 ,  B29C33/42 ,  B29C33/62 ,  B29C59/02 ,  B29K27/12 ,  B81C1/00 ,  G03F7/00 ,  G11B5/855 ,  H01L21/027 ,  B44B5/00

Abstract: Nonstick molds (16) and method of forming and using such molds are provided. The molds are formed of a nonstick material such as those selected from the group consisting of fluoropolymers, fluorinated siloxane polymers, silicones , and mixtures thereof. The nonstick mold is imprinted with a negative image o f a master mold, where the master mold is designed to have a topography patter n corresponding to that desired surface on the surface of a microelectronic substrate. The nonstick mold (16) is then used to transfer the pattern or image (18) to a flowable film (20) on the substrate (22) surface. This film is subsequently cured or hardened, resulting in the desired pattern (26) ready for further processing.

公开(公告)号：AU4349489A

公开(公告)日：1990-04-18

申请号：AU4349489

申请日：1989-09-25

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  BREWER TERRY ,  MORI J MICHAEL

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/085 ,  G03F7/09 ,  H01L21/027 ,  G03C1/76 ,  C08K5/23 ,  G03C5/00 ,  G03F7/26

公开(公告)号：CA2462613A1

公开(公告)日：2003-05-08

申请号：CA2462613

申请日：2002-10-29

Applicant: BREWER SCIENCE INC

Inventor： SHIH WU-SHENG ,  LAMB JAMES E III

IPC: H05K3/22 ,  B81C1/00 ,  C08G59/68 ,  C08L63/00 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/4763

Abstract: The present invention is directed towards planarization materials that produ ce little or no volatile byproducts during the hardening process when used in contact planarization process. The materials can be hardened by photo- orradiation or by heat during the planirization process, and they include on e or more types of monomers, oligomers, or mixtures thereof, an optional cross - linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of t he polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

公开(公告)号：AU6790000A

公开(公告)日：2001-03-19

申请号：AU6790000

申请日：2000-08-17

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  SHAO XIE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/47 ,  H01L21/66

Abstract: An improved via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid components. The boiling point of the solvent system is less than the cross-linking temperature of the composition. Preferred solvents for use in the solvent system include those selected from the group consisting of alcohols, ethers, glycol ethers, amides, ketones, and mixtures thereof. Preferred polymer binders are those having an aliphatic backbone and a molecular weight of less than about 80,000, with polyesters being particularly preferred. In use, the fill composition is applied to the substrate surfaces forming the contact or via holes as well as to the substrate surfaces surrounding the holes, followed by heating to the composition reflow temperature so as to cause the composition to uniformly flow into and cover the hole-forming surfaces and substrate surfaces. The composition is then cured, and the remainder of the dual damascene process is carried out.

公开(公告)号：WO02099531A2

公开(公告)日：2002-12-12

申请号：PCT/US0215694

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  LAMB JAMES E III ,  FLAIM TONY D ,  HUANG RUNHUI ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  G03F

CPC classification number: G03F7/091 ,  Y10S438/952 ,  Y10T428/31511 ,  Y10T428/31525

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract translation: 提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。 在一个实施方案中，组合物包括包含具有未反应的环氧基团的重复单体的聚合物。 在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环氧化物环的重复单体。 组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

公开(公告)号：WO03031096A3

公开(公告)日：2003-07-03

申请号：PCT/US0232655

申请日：2002-10-10

Applicant: BREWER SCIENCE INC

Inventor： SHIH WU-SHENG ,  LAMB JAMES E III ,  DAFFRON MARK

IPC: B29C33/40 ,  B29C33/38 ,  B29C33/42 ,  B29C33/62 ,  B29C59/02 ,  B29K27/12 ,  B81C1/00 ,  G03F7/00 ,  G11B5/855 ,  H01L21/027 ,  B44B5/00

CPC classification number: B82Y10/00 ,  B29C33/3857 ,  B29C33/62 ,  B81C99/009 ,  B81C2201/034 ,  B82Y40/00 ,  G03F7/0002

Abstract: Nonstick molds (16) and method of forming and using such molds are provided. The molds are formed of a nonstick material such as those selected from the group consisting of fluoropolymers, fluorinated siloxane polymers, silicones, and mixtures thereof. The nonstick mold is imprinted with a negative image of a master mold, where the master mold is designed to have a topography pattern corresponding to that desired surface on the surface of a microelectronic substrate. The nonstick mold (16) is then used to transfer the pattern or image (18) to a flowable film (20) on the substrate (22) surface. This film is subsequently cured or hardened, resulting in the desired pattern (26) ready for further processing.

Abstract translation: 提供了不粘模具（16）以及成型和使用这种模具的方法。 模具由不粘材料形成，例如选自含氟聚合物，氟化硅氧烷聚合物，聚硅氧烷及其混合物的那些材料。 不粘模具印有母模的负像，其中母模被设计成具有对应于微电子衬底表面上的所需表面的形貌图案。 然后使用不粘模具（16）将图案或图像（18）转印到基材（22）表面上的可流动膜（20）。 随后将该膜固化或硬化，导致所需图案（26）准备好进一步处理。

公开(公告)号：WO2012092139A3

公开(公告)日：2012-10-18

申请号：PCT/US2011066910

申请日：2011-12-22

Applicant: BREWER SCIENCE INC ,  WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

Inventor： WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

Abstract translation: 提供了形成微电子结构的方法。 该方法包括使用受控的底切过程形成T形结构，以及将可选择性蚀刻的组合物沉积到T形结构的底切区域中。 随后移除T形结构以产生非常小的底切形成的特征，其与T形结构的底切区域的宽度和可选地高度相符。 这些方法可以与其他常规图案化方法相结合，以创建具有非常小的特征尺寸的结构，而与用于图案化的光的波长无关。