公开(公告)号：WO2009105556A2

公开(公告)日：2009-08-27

申请号：PCT/US2009034540

申请日：2009-02-19

Applicant: BREWER SCIENCE INC ,  MEADOR JIM ,  GUERRERO DOUGLAS ,  MERCADO RAMIL-MARCELO

Inventor： MEADOR JIM ,  GUERRERO DOUGLAS ,  MERCADO RAMIL-MARCELO

IPC: H01L21/027

CPC classification number: G03F7/091 ,  G03F7/039 ,  G03F7/095 ,  G03F7/2041 ,  Y10T428/24521 ,  Y10T428/265 ,  Y10T428/31504

Abstract: The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet- developable bottom anti -reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dyc-fillcd and dye-attached compositions for use in the anti-reflective coatings. The anti-re ilecti ve coatings are thermally crosslinkable and photochcmically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.

Abstract translation: 本发明提供了制造微电子结构的方法，并且由此形成的所得结构使用双层，光敏，可湿式显影的底部防反射涂层堆叠，以在曝光期间降低基板的反射率。 本发明提供了用于抗反射涂层中的dyc-fillcd和染料附着组合物。 抗反射涂层是可热交联的，并且可以光学去交联。 底部抗反射涂层堆叠具有梯度光学性质，并与光致抗蚀剂同时发展。 该方法和结构特别适用于高NA光刻工艺。

公开(公告)号：WO2009105556A4

公开(公告)日：2010-01-28

申请号：PCT/US2009034540

申请日：2009-02-19

Applicant: BREWER SCIENCE INC ,  MEADOR JIM ,  GUERRERO DOUGLAS ,  MERCADO RAMIL-MARCELO

Inventor： MEADOR JIM ,  GUERRERO DOUGLAS ,  MERCADO RAMIL-MARCELO

IPC: H01L21/027

CPC classification number: G03F7/091 ,  G03F7/039 ,  G03F7/095 ,  G03F7/2041 ,  Y10T428/24521 ,  Y10T428/265 ,  Y10T428/31504

Abstract: The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet- developable bottom anti -reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dyc-fillcd and dye-attached compositions for use in the anti-reflective coatings. The anti-re ilecti ve coatings are thermally crosslinkable and photochcmically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.

Abstract translation: 本发明提供了制造微电子结构的方法，并且由此形成的所得结构使用双层，光敏，可湿式显影的底部防反射涂层堆叠，以在曝光期间降低基板的反射率。 本发明提供了用于抗反射涂层中的dyc-fillcd和染料附着组合物。 抗反射涂层是可热交联的，并且可以光学去交联。 底部抗反射涂层堆叠具有梯度光学性质，并与光致抗蚀剂同时发展。 该方法和结构特别适用于高NA光刻工艺。

公开(公告)号：EP2255377A4

公开(公告)日：2011-11-09

申请号：EP09712806

申请日：2009-02-19

Applicant: BREWER SCIENCE INC

Inventor： MEADOR JIM ,  GUERRERO DOUGLAS ,  MERCADO RAMIL-MARCELO

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20

CPC classification number: G03F7/091 ,  G03F7/039 ,  G03F7/095 ,  G03F7/2041 ,  Y10T428/24521 ,  Y10T428/265 ,  Y10T428/31504

Abstract: The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet-developable bottom anti-reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dye-filled and dye-attached compositions for use in the anti-reflective coatings. The anti-reflective coatings are thermally crosslinkable and photochemically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.

Abstract translation: 本发明提供了制造微电子结构的方法，并且由此形成的所得到的结构使用双层，感光，可湿式显影的底部抗反射涂层堆叠，以在曝光期间降低基板的反射率。 本发明提供用于抗反射涂层的染料填充和附着染料的组合物。 抗反射涂层是可热交联的并且在光化学上是可交联的。 底部抗反射涂层堆叠具有梯度光学性质，并与光致抗蚀剂同时发展。 该方法和结构特别适用于高NA光刻工艺。

公开(公告)号：EP2070107A4

公开(公告)日：2010-09-08

申请号：EP07814157

申请日：2007-08-16

Applicant: BREWER SCIENCE INC

Inventor： GUERRERO DOUGLAS J ,  MERCADO RAMIL-MARCELO

IPC: H01L21/027

CPC classification number: H01L21/0274 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/168