公开(公告)号：JP2012238026A

公开(公告)日：2012-12-06

申请号：JP2012179714

申请日：2012-08-14

Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

Inventor： SUN SAM X

IPC: G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  H01L21/0271 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a novel, developer-soluble, hard mask composition and a method of using the composition to form a microelectronic structure.SOLUTION: The composition comprises a compound having the formula, a compound for controlling a development rate, and a crosslinking agent in a solvent system. The method involves applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, and subsequently, light exposure and developing, during which a light-exposed portion of the imaging layer and a hard mask composition adjacent to the light-exposed portion are removed, are performed. The size of the hard mask composition structure is controlled by the development rate, which yields a feature size that is a fraction of the imaging layer feature size, and finally gives a pattern that can ultimately be transferred to the substrate.

Abstract translation: 要解决的问题：提供一种新型的显影剂可溶性硬掩模组合物和使用该组合物形成微电子结构的方法。 解决方案：组合物包含具有下式的化合物，用于控制显影速率的化合物和溶剂体系中的交联剂。 该方法包括将组合物施加到基底并固化组合物。 将成像层施加到组合物上，随后进行曝光和显影，其中去除了成像层的光曝光部分和与光曝光部分相邻的硬掩模组合物。 硬掩模组合物结构的尺寸由显影速率控制，其产生作为成像层特征尺寸的一部分的特征尺寸，并且最终给出最终可以转移到基底的图案。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：WO2009097436A3

公开(公告)日：2009-10-15

申请号：PCT/US2009032446

申请日：2009-01-29

Applicant: BREWER SCIENCE INC ,  SUN SAM X ,  XU HAO ,  FLAIM TONY D

Inventor： SUN SAM X ,  XU HAO ,  FLAIM TONY D

IPC: G03F7/26 ,  H01L21/027

CPC classification number: H01L21/0337 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/312

Abstract: This invention provides methods of creating via or trench structures on a developer- soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

Abstract translation: 本发明提供了使用多重曝光显影工艺在显影剂可溶性硬掩模层上产生通孔或沟槽结构的方法。 当成像层被显影时，硬掩模层被图案化。 在使用有机溶剂剥离成像层之后，可以使用随后的曝光显影工艺来进一步图案化相同的硬掩模。 最终，可以使用蚀刻工艺将图案转移到衬底。

公开(公告)号：WO2005001901A3

公开(公告)日：2005-12-01

申请号：PCT/US2004018851

申请日：2004-06-10

Applicant: BREWER SCIENCE INC ,  SUN SAM X ,  LI CHENGHONG

Inventor： SUN SAM X ,  LI CHENGHONG

IPC: G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03C5/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/30 ,  H01L20060101 ,  H01L21/308 ,  H01L21/31 ,  H01L21/3213

CPC classification number: G03F7/091 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  H01L21/3081 ,  H01L21/32139

Abstract: A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.

Abstract translation: 提供了与非常薄的光致抗蚀剂结合使用硬掩模或保护层的新颖方法。 在该过程中，保护层的薄膜被涂覆在待通过反应离子蚀刻（RIE）选择性修饰的基底的表面上。 保护层是光敏的和抗反射的。 在保护层的顶部涂覆极薄的光致抗蚀剂层。 以由保护层和光致抗蚀剂层的敏感度确定的波长选择性地暴露于光化辐射。 用普通的碱性显影剂显影在光致抗蚀剂和由曝光产生的保护层上的潜像。 光刻胶和下层保护层的三维图案通过单次曝光和单次显影同时形成。 当通过RIE蚀刻底层衬底时，保护层是掩模层，而不是光致抗蚀剂。

公开(公告)号：EP2245512A4

公开(公告)日：2011-08-10

申请号：EP09706292

申请日：2009-01-29

Applicant: BREWER SCIENCE INC

Inventor： SUN SAM X ,  XU HAO ,  FLAIM TONY D

IPC: G03F7/26 ,  H01L21/027

CPC classification number: H01L21/0337 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/312

Abstract: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

公开(公告)号：EP2089770A4

公开(公告)日：2010-12-15

申请号：EP07843009

申请日：2007-09-21

Applicant: BREWER SCIENCE INC

Inventor： SUN SAM X

IPC: G03F7/004 ,  G03F7/11

CPC classification number: G03F7/11 ,  H01L21/0271 ,  H01L21/312

Abstract: Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, and a crosslinking agent in a solvent system. The methods involve applying the composition to a substrate and curing the composition. An imaging layer is applied to the composition, followed by light exposure and developing, during which the light-exposed portions of the imaging layer are removed, along with portions of the hard mask composition adjacent said light-exposed portions. The size of the hard mask composition structures are controlled by the development rate, and they yield feature sizes that are a fraction of the imaging layer feature sizes, to give a pattern that can ultimately be transferred to the substrate.