2.
    发明专利
    未知

    公开(公告)号:ES2150600T3

    公开(公告)日:2000-12-01

    申请号:ES95944193

    申请日:1995-12-14

    Abstract: A thermosetting anti-reflective coating and method for making and using the same is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

    CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING

    公开(公告)号:SG185250A1

    公开(公告)日:2012-11-29

    申请号:SG2012069340

    申请日:2009-10-22

    Abstract: CYCLIC OLEFIN COMPOSITIONS FOR TEMPORARY WAFER BONDING AbstractNew compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process.Figure 1

    ACID-ETCH RESISTANT, PROTECTIVE COATINGS

    公开(公告)号:SG175217A1

    公开(公告)日:2011-11-28

    申请号:SG2011074903

    申请日:2010-03-19

    Abstract: New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.

    Verfahren zum reversiblen Anbringen eines Vorrichtungswafers an einem Trägersubstrat und ein daraus erhaltener Gegenstand

    公开(公告)号:DE112009000140B4

    公开(公告)日:2022-06-15

    申请号:DE112009000140

    申请日:2009-01-23

    Abstract: Verfahren zum Bilden einer temporären Waferbondstruktur, bei demein erstes Substrat (12) mit Vorderseiten- und Rückseitenoberflächen (16) bereitgestellt wird, wobei die Vorderseitenoberfläche einen peripheren Bereich (18) und einen zentralen Bereich (20) aufweist,auf dem peripheren Bereich (18) ein Randbond (46) gebildet wird, wobei der Randbond (46) in dem zentralen Bereich (20) fehlt, wobei der Randbond (46) aus einem Material gebildet wird, das Monomere, Oligomere oder Polymere enthält, die ausgewählt sind aus der Gruppe bestehend aus Epoxidharzen, Acrylen, Silikonen, Styrolen, Vinylhalogeniden, Vinylestern, Polyamiden, Polyimiden, Polysulfonen, Polyethersulfonen, Cycloolefinen, Polyolefinkautschuken und Polyurethanen, wobei der Randbond (46) eine Haftstärke aufweist, die größer als etwa 345 kPa ist, undin den zentralen Bereich (20) ein amorphes polymeres Füllmaterial (22) eingebracht wird, wobei das Füllmaterial eine Haftstärke von weniger als etwa 345 kPa Überdruck aufweist, bestimmt mittels ASTM D4541/D7234, wobei das Füllmaterial (22) einen Gewichtsverlust von weniger als etwa 1 Gew.-% bei Temperaturen von etwa 150°C bis etwa 350°C erfährt, wobei der Randbond (46) eine Haftstärke aufweist, die mindestens etwa 3447 Pa Überdruck größer ist als die Haftstärke des Füllmaterials (22), und anschließendein zweites Substrat (32) mit einer Trägeroberfläche (34) in Kontakt gebracht wird, um so den Randbond (46) an die Trägeroberfläche (34) zu bonden und die temporäre Waferbondingstruktur zu bilden.

    LASER ABLATIVE DIELECTRIC MATERIAL

    公开(公告)号:SG11201900281XA

    公开(公告)日:2019-02-27

    申请号:SG11201900281X

    申请日:2017-07-14

    Abstract: Dielectric materials with optimal mechanical properties for use in laser ablation patterning are proposed. These materials include a polymer selected from the group consisting of polyureas, polyurethane, and polyacylhydrazones. New methods to prepare suitable polyacylhydrazones are also provided. Those methods involve mild conditions and result in a soluble polymer that is stable at room temperature and can be incorporated into formulations that can be coated onto microelectronic substrates. The dielectric materials exhibit high elongation, low CTE, low cure temperature, and leave little to no debris post-ablation.

    ACID-ETCH RESISTANT, PROTECTIVE COATINGS

    公开(公告)号:SG2014012512A

    公开(公告)日:2014-06-27

    申请号:SG2014012512

    申请日:2010-03-19

    Abstract: New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES

    公开(公告)号:SG152244A1

    公开(公告)日:2009-05-29

    申请号:SG2009025776

    申请日:2005-01-07

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition- polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

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