公开(公告)号：DE4223667B4

公开(公告)日：2007-01-11

申请号：DE4223667

申请日：1992-07-17

Applicant: BRIDGESTONE CORP

Inventor： KOJIMA SHOICHI ,  MINAGAWA KAZUHIRO ,  SAITO TASUKU ,  KURACHI YASUO ,  KANO HARUYUKI

IPC: C01B31/36 ,  C04B35/565 ,  H01L21/67

Abstract: A process for the preparation of a beta-silicon carbide powder of high purity which is suitable for use in the manufacture of semiconductor equipment and which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor devices. The process comprises preparing a carbon- and silicon-containing starting mixture comprising (a) at least one siliceous material selected from liquid silicon compounds and solid siliceous substances derived from a hydrolyzable silicon compound, and (b) at least one carbonaceous material selected from polymerizable or cross-linkable organic compounds prepared in the presence of a catalyst which is substantially free from atoms harmful to the manufacture of semiconductor devices. The starting mixture comprises at least one liquid substance used as component (a) or (b). The starting mixture is then solidified by heating and/or by use of a catalyst or a curing agent. The resulting solid body is optionally heat treated in a non-oxidizing atmosphere at a temperature in the range of from 500 DEG C. to 1300 DEG C. for a period sufficient to remove volatiles. The cured and optionally heat-treated body is calcined in a non-oxidizing atmosphere under conditions sufficient to give beta-silicon carbide powder.

公开(公告)号：FR2679219B1

公开(公告)日：1994-04-01

申请号：FR9208833

申请日：1992-07-17

Applicant: SUMITOMO METAL IND ,  BRIDGESTONE CORP

Inventor： KOJIMA SHOICHI ,  MINAGAWA KAZUHIRO ,  SAITO TASUKU ,  KURACHI YASUO ,  KANO HARUYUKI

IPC: C04B35/565 ,  H01L21/67 ,  C01B31/36 ,  H01L21/68

Abstract: La présente invention concerne un procédé pour la préparation d'une poudre de carbure de silicium béta appropriée pour l'utilisation dans la fabrication d'équipements à semi-conducteurs et ayant une teneur de 1 ppm ou moins de chaque atome nuisible à la fabrication de dispositifs à semi-conducteurs, comprenant les opérations consistant à préparer un mélange de départ contenant du carbone et du silicium comprenant (a) au moins un produit siliceux choisi parmi les composés liquides du silicium et les substances siliceuses solides dérivées d'un composé du silicium hydrolysable, et (b) au moins un produit carboné choisi parmi les composés organiques polymérisables ou réticulables préparés en présence d'un catalyseur qui est pratiquement exempt d'atomes nuisibles à la fabrication de dispositifs à semi-conducteurs, au moins un produit utilisé comme composant (a) ou (b) étant une substance liquide; à solidifier le mélange de départ par chauffage et/ou en utilisant un catalyseur ou un agent de durcissement; et à calciner le corps solide résultant dans une atmosphère non oxydante dans des conditions suffisantes pour obtenir une poudre de carbure de silicium béta.

公开(公告)号：DE4223667A1

公开(公告)日：1993-01-21

申请号：DE4223667

申请日：1992-07-17

Applicant: SUMITOMO METAL IND ,  BRIDGESTONE CORP

Inventor： KOJIMA SHOICHI ,  MINAGAWA KAZUHIRO ,  SAITO TASUKU ,  KURACHI YASUO ,  KANO HARUYUKI

IPC: C01B31/36 ,  C04B35/565 ,  H01L21/67

Abstract: A process for the preparation of a beta-silicon carbide powder of high purity which is suitable for use in the manufacture of semiconductor equipment and which has a content of 1 ppm or less of each atom harmful to the manufacture of semiconductor devices. The process comprises preparing a carbon- and silicon-containing starting mixture comprising (a) at least one siliceous material selected from liquid silicon compounds and solid siliceous substances derived from a hydrolyzable silicon compound, and (b) at least one carbonaceous material selected from polymerizable or cross-linkable organic compounds prepared in the presence of a catalyst which is substantially free from atoms harmful to the manufacture of semiconductor devices. The starting mixture comprises at least one liquid substance used as component (a) or (b). The starting mixture is then solidified by heating and/or by use of a catalyst or a curing agent. The resulting solid body is optionally heat treated in a non-oxidizing atmosphere at a temperature in the range of from 500 DEG C. to 1300 DEG C. for a period sufficient to remove volatiles. The cured and optionally heat-treated body is calcined in a non-oxidizing atmosphere under conditions sufficient to give beta-silicon carbide powder.