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    LAMINATED STRUCTURE, AND METHOD OF MANUFACTURE THEREOF
    2.
    发明专利
    LAMINATED STRUCTURE, AND METHOD OF MANUFACTURE THEREOF 未知

    公开(公告)号：CA2356217A1

    公开(公告)日：2000-06-29

    申请号：CA2356217

    申请日：1999-12-02

    Applicant: BRIDGESTONE CORP

    Inventor： YOSHIKAWA MASATO ,  KUMAGAI SHO

    IPC: G11B7/243 ,  B32B9/00 ,  C03C17/22 ,  C23C14/06 ,  C23C14/34 ,  G11B7/24 ,  G11B7/253 ,  G11B7/257 ,  G11B7/26

    Abstract: A laminated structure has a plastic or glass substrate on which is formed a sputter-deposited silicon carbide layer, the optical transmittance of which is 80 % or less. Preferably, the silicon carbide layer has a reflectivity of 10 - 50%, the plastic is polycarbonate, the impurity on the surface of the silico n carbide layer is less than 1.0 x 1012 atoms/cm2, and the silicon carbide lay er has a thickness of 15-100 nm. The laminated structure is a desirable materia l of recording media such as CD-ROMs and DVD-ROMs since it comprises a silicon carbide layer that is oxidation-resistant, chlorine-resistant and moisture- resistant.

    LAMINATE STRUCTURE AND PRODUCTION METHOD THEREFOR
    3.
    发明专利
    LAMINATE STRUCTURE AND PRODUCTION METHOD THEREFOR 未知

    公开(公告)号：CA2357933C

    公开(公告)日：2008-09-30

    申请号：CA2357933

    申请日：1999-12-02

    Applicant: BRIDGESTONE CORP

    Inventor： YOSHIKAWA MASATO ,  KUMAGAI SHO

    IPC: C23C14/16 ,  G11B7/243 ,  B32B15/04 ,  C03C17/36 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/26 ,  G11B11/105

    Abstract: There is provided a laminated structure having a silicon carbide coating layer formed by sputtering on an alloy substrate, and the silicon carbide has a light transmittance of 70% or greater. It is preferable that the alloy substrate is a magnetic alloy or a phase--changing alloy, the impurity ratio on the surface of the silicon carbide coating layer is 1.0 .times. 10 12 atoms/cm2 or less and the thickness of th e silicon carbide coating layer is 10 to 100 nm. Since the laminated structure has a silicon carbide coating layer which is excellent in oxidation resistance, chlorine resistance, humidity resistance, and which has high refractive index, high light transmittance and the like, it is suitable for an optical disk recording medium such as a CD-RW, a DVD-RAM or the like.

    4.
    发明专利
    未知

    公开(公告)号：DE69939044D1

    公开(公告)日：2008-08-21

    申请号：DE69939044

    申请日：1999-09-28

    Applicant: BRIDGESTONE CORP

    Inventor： YOSHIKAWA MASATO ,  OHNO SHINGO ,  KUMAGAI SHO

    IPC: C23C14/06 ,  C23C14/00 ,  C23C14/34 ,  C23C14/54

    Abstract: A method for making a dry plating built-up film comprises providing silicon carbide as a starting source and subjecting to dry plating while changing a concentration of a reactive gas continuously or intermittently to deposit and form, on a substrate, a thin film having different refractive indices along its thickness. A method for making a sputter built-up film is also described, which comprising providing silicon carbide as a target and subjecting to sputtering while changing making electric power against the target continuously or intermittently to deposit and form a thin film having different refractive indices along its thickness.

    LAMINATED STRUCTURE, AND METHOD OF MANUFACTURE THEREOF
    5.
    发明专利
    LAMINATED STRUCTURE, AND METHOD OF MANUFACTURE THEREOF 未知

    公开(公告)号：CA2356217C

    公开(公告)日：2004-11-09

    申请号：CA2356217

    申请日：1999-12-02

    Applicant: BRIDGESTONE CORP

    Inventor： YOSHIKAWA MASATO ,  KUMAGAI SHO

    IPC: G11B7/243 ,  B32B9/00 ,  C03C17/22 ,  C23C14/06 ,  C23C14/34 ,  G11B7/24 ,  G11B7/253 ,  G11B7/257 ,  G11B7/26

    Abstract: A laminated structure which has a substrate formed of a synthetic resin or glass and a silicon carbide coating layer formed by sputtering, wherein the light transmittance of the silicon carbide coating layer is 80% or less. Preferably, the silicon carbide coating layer has a light reflectance of 10 to 50%, the synthetic resin is polycarbonate, the impurity ratio on the surface of the silicon carbide coating layer is 1.0 x 1012 atoms/cm2 or less, and the silicon carbide layer has a thickness of 15 to 100 nm. The laminated structure is suitable for a recording medium such as a CD-ROM and a DVD-ROM since it has a silicon carbide layer excellent in oxidation resistance, chlorine resistance, moisture resistance, and the like.

    LAMINATE STRUCTURE AND PRODUCTION METHOD THEREFOR
    6.
    发明专利
    LAMINATE STRUCTURE AND PRODUCTION METHOD THEREFOR 未知

    公开(公告)号：CA2357933A1

    公开(公告)日：2000-06-29

    申请号：CA2357933

    申请日：1999-12-02

    Applicant: BRIDGESTONE CORP

    Inventor： KUMAGAI SHO ,  YOSHIKAWA MASATO

    IPC: G11B7/243 ,  C03C17/36 ,  C23C14/06 ,  C23C14/34 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/26 ,  G11B11/105 ,  B32B15/04

    Abstract: A laminate structure having a silicon carbide coating layer formed on an all oy base material by sputtering, characterized in that a light transmittance of the silicon carbide coating layer is at least 70%. A mode in which the alloy base material is a magnetic alloy or phase change alloy, a mode in which impurities on the surface of the silicon carbide coating layer accounts for up to 1.0 x 1012 atoms/cm2, or a mode in which the coating layer is 10 to 100 n m thick is preferable. This laminate layer, having the silicon carbide coating layer excellent in oxidation resistance, chlorine resistance, moisture resistance, refractive index, light transmittance, etc., is suitably used fo r an optical disk recording medium such as CD-RW and DVD-RAM.

    6h-type semi-insulating silicon carbide single crystal
    10.
    发明专利
    6h-type semi-insulating silicon carbide single crystal 审中-公开
    6H型半绝缘碳化硅单晶

    公开(公告)号：JP2010202459A

    公开(公告)日：2010-09-16

    申请号：JP2009049768

    申请日：2009-03-03

    Applicant: Bridgestone Corp ,  株式会社ブリヂストン

    Inventor： MOTOYAMA TAKESHI ,  KUMAGAI SHO ,  ENDO SHIGEKI ,  KONDO DAISUKE ,  ISHIHARA HIDETOSHI

    IPC: C30B29/36

    Abstract: PROBLEM TO BE SOLVED: To provide a 6H-type semi-insulating silicon carbide single crystal which has high resistivity and stable specific resistance without being affected by the thermal history.
    SOLUTION: The 6H-type semi-insulating silicon carbide single crystal, produced by using a production apparatus for a 6H-type semi-insulating silicon carbide single crystal, has intrinsic point defects. The intrinsic point defects included most frequently in the intrinsic point defects are R-centers measured by capacitance transient spectroscopy. The number of the R-centers are set to be larger than the absolute value of the difference between the number of donor and the number of acceptor. Thereby, the R-centers measured by the capacitance transient spectroscopy compensate the surplus dopant. Further, as the R-centers are thermally stable, the R-centers are hardly affected by the thermal history until the silicon carbide single crystal is completed. Accordingly, the R-centers compensate the surplus dopant stably without depending on the temperature conditions until the silicon carbide single crystal is produced.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种6H型半绝缘碳化硅单晶，其具有高电阻率和稳定的电阻率，而不受热历史的影响。 解决方案：通过使用6H型半绝缘碳化硅单晶的制造装置制造的6H型半绝缘碳化硅单晶具有固有的点缺陷。 固有点缺陷中最常见的内在点缺陷是通过电容瞬态光谱测量的R中心。 R中心的数量设定为大于供体数与受体数之间的差的绝对值。 因此，通过电容瞬变光谱测量的R中心补偿了剩余的掺杂剂。 此外，由于R中心是热稳定的，因此直到碳化硅单晶完成之前，R中心几乎不受热历史的影响。 因此，R中心在不依赖于温度条件的情况下稳定地补偿剩余掺杂物，直到生成碳化硅单晶。 版权所有（C）2010，JPO＆INPIT

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