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    POLISHING COMPOSITION CONTAINING INHIBITOR OF TUNGSTEN ETCHING
    1.
    发明专利
    POLISHING COMPOSITION CONTAINING INHIBITOR OF TUNGSTEN ETCHING 失效

    公开(公告)号：JPH11116948A

    公开(公告)日：1999-04-27

    申请号：JP21251498

    申请日：1998-07-28

    Applicant: CABOT CORP

    Inventor： GRUMBINE STEVEN K ,  STREINZ CHRISTOPHER C ,  HOGLUND ERIC W G

    IPC: C09G1/02 ,  C09K3/14 ,  C09K13/04 ,  C09K15/20 ,  C23F3/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  B24B37/00

    Abstract: PROBLEM TO BE SOLVED: To enable a substrate including at least one layer of tungsten and a titanium layer and/or a titanium nitride layer to be cleaned at one stage by cleaning the tungsten layer with a chemical mechanical polishing compsn. contg. a compd. capable of etching tungsten and at least one inhibitor of tungsten etching. SOLUTION: 'A compd. capable of etching tungsten' means a compd. which can etch a solid tungsten metal or an oxide thereof to convert it into a soluble etching product. An oxidizing agent, a fluoride-contg. compd., an org. acid (e.g. oxalic or malonic acid), etc., are examples of such a compd., which is contained in an amt. of 0.5-50.0 wt.% in the compsn. An oxidizing agent slowly etches tungsten at a low pH. The inhibitor of tungsten etching exhibits its effects at a pH of about 9.0. An oxidizing agent (e.g. hydrogen peroxide), a compd. having a nitrogen-contg. heterocyclic functional group (e.g. 2, 3, 5- trimethylpyrazine), etc., are used as the inhibitor and contained in an amt. of 0.001-2.0 wt.% of the compsn. The compsn. is combined with an abrasive to give a chemical mechanical polishing slurry.

    SLURRY FOR CHEMICAL AND MECHANICAL POLISHING USED FOR METAL LAYER AND FILM
    2.
    发明专利
    SLURRY FOR CHEMICAL AND MECHANICAL POLISHING USED FOR METAL LAYER AND FILM 失效

    公开(公告)号：JPH1044047A

    公开(公告)日：1998-02-17

    申请号：JP11940497

    申请日：1997-05-09

    Applicant: CABOT CORP

    Inventor： SCHERBER DEBRA L ,  KAUFMAN VLASTA BRUSIC ,  KISTLER RODNEY C ,  MUELLER BRIAN L ,  STREINZ CHRISTOPHER C

    IPC: B24C1/08 ,  B24C11/00 ,  C09G1/02 ,  C23F3/00 ,  H01L21/321

    Abstract: PROBLEM TO BE SOLVED: To restrain the imperfectness and defect of a surface while performing effective polish with desired polishing speed by employing a specified rate of the selectivity of a metal layer or film and an insulating material layer. SOLUTION: When slurry consisting of fumed almina, oxyidizing agent, organic acid and demineralized water for example is used to polish chemically mechanically an aluminum layer or the like of a substrate, the selectivity of aluminum : thermal oxide, i.e., the polishing speed ratio of the aluminum layer to the thermo oxide is set to at least 50.1. This slurry includes aquous medium, abrasives, oxidizing agent and organic acid. The abrasives are metal oxide, preferably fumed abrasives among fumed sediment abrasives. Oxidizing metal salt, oxidizing metallic complex, or the like are suited for the oxidizing agent to use ammonium salt or the like. Monofunctional acid or the like, preferably succinic acid or the like is used for the organic acid. Thus, the slurry oxidizing agent, organic acid and other additives polish effectively a metal layer with desired polishing speed, while restraining the incompleteness and defect of the surface.

    COMPOSITION AND SLURRY USEFUL FOR METAL CHEMICAL MECHANICAL POLISHING(CMP)
    3.
    发明专利
    COMPOSITION AND SLURRY USEFUL FOR METAL CHEMICAL MECHANICAL POLISHING(CMP) 失效

    公开(公告)号：JPH10265766A

    公开(公告)日：1998-10-06

    申请号：JP32415397

    申请日：1997-11-26

    Applicant: CABOT CORP

    Inventor： GRUMBINE STEVEN K ,  STREINZ CHRISTOPHER C ,  MUELLER BRIAN L

    IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C09K13/04 ,  C09K13/06 ,  C23F3/00 ,  H01L21/304 ,  H01L21/321

    Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition having no potential integrated circuit-contaminating substances per se, capable of providing high-speed abrasion, and stable and active for a long period after its preparation, by including oxidizing agent(s) and catalyst(s). SOLUTION: This composition contains (A) at least one kind of oxidizing agent and (B) at least one kind of catalyst having multiple oxidative sites. Preferably, the component A has a higher electrochemical potential than that necessary for oxidizing the component (B), and is an organic per-compound, inorganic per-compound, non-per compound including a bromate, a chlorate, an iodate and a cerium (IV) compound, or a mixture thereof, specifically, being about 0.1-50 wt.% hydrogen peroxide, and the component B is preferably metallic catalyst(s), specifically, 0.01-about 0.5 wt.% ferric nitrate.

    SLURRY FOR CHEMICAL AND PHYSICAL GRINDING CONTAINING FLUORIDE ADDITIVE AND ITS USE
    4.
    发明专利
    SLURRY FOR CHEMICAL AND PHYSICAL GRINDING CONTAINING FLUORIDE ADDITIVE AND ITS USE 失效

    公开(公告)号：JPH1067986A

    公开(公告)日：1998-03-10

    申请号：JP14768897

    申请日：1997-06-05

    Applicant: CABOT CORP

    Inventor： STREINZ CHRISTOPHER C ,  MUELLER BRIAN L ,  LUCARELLI MICHAEL A ,  WALTERS MAX H

    IPC: C09G1/02 ,  C09K3/14 ,  C09K13/04 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  B24B37/00

    Abstract: PROBLEM TO BE SOLVED: To provide a slurry for chemical and mechanical polishing which can polish titanium at far much higher speed than the conventional technique without damage or defect to the product, sustains high polishing speed comparable to that of tungsten and titanium nitride and shows slow polishing speed in silica. SOLUTION: This aqueous slurry for chemical and mechanical polishing contains an oxidizing agent, a polishing agent and a fluoridecontaining additive. In a preferable embodiment, the slurry contains about 0.01-2.0wt.% of the fluoride-containing additive, which is selected from a fluoride-containing acid and a fluoride salt. The fluoride-containing additive is preferably selected from hydrofluoric acid, fluorosilicic acid and fluorotitanic acid and the content of the fluoride-containing acid is about 0.01-0.3wt.% the fluoride salt is selected from ammonium fluoride, potassium fluoride, ammonium hydrogen difluoride and potassium hydrogen difluoride.

    Chemical mechanical polishing slurry for metal layers and films
    6.
    发明公开
    Chemical mechanical polishing slurry for metal layers and films 失效
    悬架化学工艺技术Polieren von Metallschichten und Filmen

    公开(公告)号：EP0811665A3

    公开(公告)日：1998-10-21

    申请号：EP97303133

    申请日：1997-05-08

    Applicant: CABOT CORP

    Inventor： SCHERBER DEBRA L ,  KAUFMAN VLASTA BRUSIC ,  KISTLER RODNEY C ,  MUELLER BRIAN L ,  STREINZ CHRISTOPHER C

    IPC: B24C1/08 ,  B24C11/00 ,  C09G1/02 ,  C23F3/00 ,  H01L21/321

    CPC classification number: C23F3/00 ,  C09G1/02 ,  H01L21/3212

    Abstract: A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects.
    Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

    Abstract translation: 用于在与集成电路制造相关的多级互连制造的各个阶段期间化学机械抛光金属层和膜的抛光浆料。 浆料包括水性介质，研磨剂，氧化剂和有机酸。 已经发现抛光浆液显着降低或抑制二氧化硅抛光速率，从而产生增强的选择性。 此外，抛光浆料可用于以期望的抛光速率为金属层提供有效的抛光，同时最小化表面缺陷和缺陷。 还公开了利用本发明的浆料和与其相关的化学机械抛光技术在基材上生产共面金属/绝缘体膜的方法。

    9.
    发明专利
    未知

    公开(公告)号：ID23676A

    公开(公告)日：2000-05-11

    申请号：ID990529

    申请日：1997-11-21

    Applicant: CABOT CORP

    Inventor： GRUMBINE STEVEN K ,  STREINZ CHRISTOPHER C ,  MUELLER BRIAN L

    IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C09K13/04 ,  C09K13/06 ,  C23F3/00 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00 ,  H01L21/00

    Abstract: A chemical mechanical polishing precursor composition comprising at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when admixed with an oxidizing agent prior to use to remove metal layers from a substrate. Also disclosed is a chemical mechanical polishing composition comprising an oxidizing agent and at least one catalyst having multiple oxidation sites, the composition being useful when combined with an abrasive or an abrasive pad to remove metal layers from a substrate.

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