公开(公告)号：WO2011022690A2

公开(公告)日：2011-02-24

申请号：PCT/US2010046220

申请日：2010-08-20

Applicant: CALIFORNIA INST OF TECHN ,  SCHERER AXEL ,  RAJAGOPAL ADITYA ,  KIM SEHEON ,  HOMYK ANDREW P

Inventor： SCHERER AXEL ,  RAJAGOPAL ADITYA ,  KIM SEHEON ,  HOMYK ANDREW P

IPC: H01L31/04

CPC classification number: H02J50/30 ,  A61B5/0017 ,  A61B5/6867 ,  A61B2560/0219 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/0283 ,  G01N21/25 ,  H01L31/03529 ,  H01L31/0475 ,  H01L31/054 ,  H02J7/025 ,  H02J17/00 ,  H02J50/80 ,  H02S40/38 ,  H03F3/082 ,  H03F3/45183 ,  H03F2203/45702 ,  H04B10/807 ,  Y02E10/52

Abstract: The present disclosure describes an optically powered transducer with a photovoltaic collector. An optical fiber power delivery method and system and a free space power delivery method are also provided. A fabrication process for making an optically powered transducer is further described, together with an implantable transducer system based on optical power delivery.

Abstract translation: 本公开描述了具有光伏收集器的光学驱动的换能器。 还提供了光纤功率输送方法和系统以及自由空间功率输送方法。 进一步描述制造光学能量换能器的制造过程，以及基于光学功率输送的可植入换能器系统。

公开(公告)号：WO2012082523A3

公开(公告)日：2012-12-27

申请号：PCT/US2011064005

申请日：2011-12-08

Applicant: CALIFORNIA INST OF TECHN ,  KIM SEHEON ,  SCHERER AXEL ,  HUANG JINGQING ,  OH DONG YOON

Inventor： KIM SEHEON ,  SCHERER AXEL ,  HUANG JINGQING ,  OH DONG YOON

IPC: H01S5/34 ,  H01S5/183

CPC classification number: B82Y40/00 ,  B82Y20/00 ,  G02B6/1225 ,  G02F1/01708 ,  G02F2202/32 ,  H01S5/105 ,  H01S5/2081 ,  H01S5/3412

Abstract: A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral etching can be carried out on at least one side of the intermediate active quantum nanostructure layer selectively, with respect to the cladding layers to define at least one lateral recess or spacing in the intermediate active quantum nanostructure layer and respective lateral protrusions of cladding layers protruding with respect to the intermediate active quantum nanostructure layer. This method can be applied to create devices including active quantum nanostructures such as, for example, three-dimensional photonic crystals, a photonic crystal double-slab and a photonic crystal laser.

Abstract translation: 蚀刻活性量子纳米结构的方法提供了横向蚀刻介于包层之间的中间活性量子纳米结构层的步骤。 可以相对于包层选择性地在中间活性量子纳米结构层的至少一侧进行横向蚀刻，以限定中间活性量子纳米结构层中的至少一个横向凹部或间隔，并且包覆层的相应侧向突起 相对于中间活性量子纳米结构层突出。 该方法可以应用于产生包括活性量子纳米结构的器件，例如三维光子晶体，光子晶体双层板和光子晶体激光器。

公开(公告)号：EP2467881A4

公开(公告)日：2014-12-24

申请号：EP10810692

申请日：2010-08-20

Applicant: CALIFORNIA INST OF TECHN

Inventor： SCHERER AXEL ,  RAJAGOPAL ADITYA ,  KIM SEHEON ,  HOMYK ANDREW P

IPC: H01L31/04 ,  A61B5/00 ,  G01J3/02 ,  H01L27/142 ,  H01L31/0352 ,  H01L31/052 ,  H01L31/053 ,  H03F3/08 ,  H03F3/45 ,  H04B10/80

CPC classification number: H02J50/30 ,  A61B5/0017 ,  A61B5/6867 ,  A61B2560/0219 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/0283 ,  G01N21/25 ,  H01L31/03529 ,  H01L31/0475 ,  H01L31/054 ,  H02J7/025 ,  H02J17/00 ,  H02J50/80 ,  H02S40/38 ,  H03F3/082 ,  H03F3/45183 ,  H03F2203/45702 ,  H04B10/807 ,  Y02E10/52