公开(公告)号：WO1998009336A1

公开(公告)日：1998-03-05

申请号：PCT/US1997015032

申请日：1997-08-25

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： CALIFORNIA INSTITUTE OF TECHNOLOGY ,  WANG, Yu ,  FOSSUM, Eric, R.

IPC: H01L31/0232

CPC classification number: H01L27/14627 ,  H01L27/14629 ,  H01L31/02327

Abstract: Wedge-shaped optical reflectors (200 and 202) are used to reflect optical energy. Certain optical energy is incoming toward an area of the chip that is housing the non-photosensitive electronics (212). Wedges are used to reflect that radiation toward the photosensitive electronics (210).

Abstract translation: 楔形光反射器（200和202）用于反射光能。 某些光能量进入芯片的容纳非感光电子器件（212）的区域。 栅格用于将该辐射反射到感光电子器件（210）。

公开(公告)号：WO1998024186A2

公开(公告)日：1998-06-04

申请号：PCT/US1997020289

申请日：1997-11-12

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： CALIFORNIA INSTITUTE OF TECHNOLOGY ,  MANSOORIAN, Barmak ,  FOSSUM, Eric, R.

IPC: H03M00/00

CPC classification number: H04N21/2187 ,  H04N5/232 ,  H04N5/335 ,  H04N7/1675 ,  H04N19/00 ,  H04N21/2347 ,  H04N21/4223

Abstract: An imaging device integrating a photosensing array, at least one analog-to-digital converter, and an encryption circuit on a single substrate. An optical image can be directly converted into encrypted digital data prior to transmission of the image off the chip.

Abstract translation: 在单个基板上集成光感应阵列，至少一个模数转换器和加密电路的成像装置。 在从芯片传输图像之前，可以将光学图像直接转换成加密的数字数据。

公开(公告)号：EP0878007A2

公开(公告)日：1998-11-18

申请号：EP97903876.0

申请日：1997-01-22

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： FOSSUM, Eric, R.

IPC: H01L27 ,  G11C19 ,  H04N5 ,  H01L31 ,  H04N9

CPC classification number: H01L27/14609 ,  G11C19/282 ,  H01L27/14643 ,  H04N5/3535 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/374 ,  H04N9/045

Abstract: An active pixel cell includes electronic shuttering capability. The cell can be 'shuttered' to prevent additional charge accumulation. One mode transfers the current change to a storage node (260) that is blocked against accumulation of optical radiation. The charge is sampled from a floating node (40). Since the charge is stored, the node (40) can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.

公开(公告)号：EP0940029A1

公开(公告)日：1999-09-08

申请号：EP97903909.0

申请日：1997-01-22

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： FOSSUM, Eric, R. ,  KEMENY, Sabrina, E. ,  PAIN, Bedabrata

IPC: H01L27 ,  G11C19 ,  H04N5 ,  H01L31 ,  H04N9

CPC classification number: H01L27/14609 ,  G11C19/282 ,  H01L27/14643 ,  H04N5/3535 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/374 ,  H04N9/045

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit, the integrated circuit including a focal plane array of pixel cells (10), each one of the cells including a photogate (12) overlying the substrate (20) for accumulating photo-generated charge in an underlying portion of the substrate and a CCD device section (14) formed on the substrate adjacent the photogate (12) having a sensing node and at least one charge coupled device stage (16) for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate (12), and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit (604) to provide images of varying resolution. The multiresolution circuit could be employed in an array where the photosensitive portion of each pixel cell is a photodiode.

公开(公告)号：EP0878007B1

公开(公告)日：2005-05-11

申请号：EP97903876.7

申请日：1997-01-22

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： FOSSUM, Eric, R.

IPC: G11C19/28 ,  H01L31/0216 ,  H04N3/15

CPC classification number: H01L27/14609 ,  G11C19/282 ,  H01L27/14643 ,  H04N5/3535 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/374 ,  H04N9/045

Abstract: An active pixel cell includes electronic shuttering capability. The cell can be 'shuttered' to prevent additional charge accumulation. One mode transfers the current change to a storage node (260) that is blocked against accumulation of optical radiation. The charge is sampled from a floating node (40). Since the charge is stored, the node (40) can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.

公开(公告)号：EP1086578A1

公开(公告)日：2001-03-28

申请号：EP99912623.8

申请日：1999-03-16

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： PAIN, Bedabrata ,  ZHOU, Zhimin ,  FOSSUM, Eric, R.

IPC: H04N3/14

CPC classification number: H04N5/374 ,  H04N5/347 ,  H04N5/3575 ,  H04N5/378

Abstract: An imager (10) that is better suited for low-light detection capability. In accordance with a preferred embodiment, the imager may be easily configured to provide an imager (10) having multi-resolution capability where SNR can be adjusted for optimum low-level detectibility. Multi-resolution signal processing functionality is provided on-chip to achieve high speed imaging, employs an improved pixel binning approach with fully differential circuits situated so that all extraneous and pick-up noise is eliminated. The current implementation requires no frame transfer memory, thereby reducing chip size. The reduction in area enables larger area format light adaptive imager implementations.

公开(公告)号：EP0940029B1

公开(公告)日：2004-06-23

申请号：EP97903909.6

申请日：1997-01-22

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： FOSSUM, Eric, R. ,  KEMENY, Sabrina, E. ,  PAIN, Bedabrata

IPC: H04N3/14 ,  H04N5/335 ,  H04N3/15

CPC classification number: H01L27/14609 ,  G11C19/282 ,  H01L27/14643 ,  H04N5/3535 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/374 ,  H04N9/045

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit, the integrated circuit including a focal plane array of pixel cells (10), each one of the cells including a photogate (12) overlying the substrate (20) for accumulating photo-generated charge in an underlying portion of the substrate and a CCD device section (14) formed on the substrate adjacent the photogate (12) having a sensing node and at least one charge coupled device stage (16) for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate (12), and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit (604) to provide images of varying resolution. The multiresolution circuit could be employed in an array where the photosensitive portion of each pixel cell is a photodiode.