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公开(公告)号：DE60032515T2
公开(公告)日：2007-09-27
申请号：DE60032515
申请日：2000-10-26
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： PORTER D , SKINNER P , SIMMONS STEPHANIE
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公开(公告)号：DE60032515D1
公开(公告)日：2007-02-01
申请号：DE60032515
申请日：2000-10-26
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： PORTER D , SKINNER P , SIMMONS STEPHANIE
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公开(公告)号：DE69827801T2
公开(公告)日：2005-11-03
申请号：DE69827801
申请日：1998-02-10
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： PORTER D , CHAKAROVA S , KNALL JOHAN , SPINDT J
IPC: C25F3/02 , B81C1/00 , C25F3/14 , H01J9/02 , C25D5/02 , C25D5/48 , B23H3/00 , H01J1/02 , H01J1/62 , B44C1/22
Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.
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公开(公告)号：DE69827801D1
公开(公告)日：2004-12-30
申请号：DE69827801
申请日：1998-02-10
Applicant: CANDESCENT INTELLECTUAL PROP
Inventor： PORTER D , CHAKAROVA S , KNALL JOHAN , SPINDT J
IPC: C25F3/02 , B81C1/00 , C25F3/14 , H01J9/02 , C25D5/02 , C25D5/48 , B23H3/00 , H01J1/02 , H01J1/62 , B44C1/22
Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.
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