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    1.
    发明专利
    未知

    公开(公告)号：DE69725430T2

    公开(公告)日：2004-07-22

    申请号：DE69725430

    申请日：1997-03-05

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： SPINDT J ,  CHAKAROVA S ,  NIKOLOVA S ,  SEARSON C ,  HAVEN A ,  KNALL JOHAN ,  MACAULAY M ,  BARTON W

    IPC: B81C1/00 ,  C25F3/14 ,  H01J9/02

    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

    2.
    发明专利
    未知

    公开(公告)号：DE69725430D1

    公开(公告)日：2003-11-13

    申请号：DE69725430

    申请日：1997-03-05

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： SPINDT J ,  CHAKAROVA S ,  NIKOLOVA S ,  SEARSON C ,  HAVEN A ,  KNALL JOHAN ,  MACAULAY M ,  BARTON W

    IPC: B81C1/00 ,  C25F3/14 ,  H01J9/02

    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

    3.
    发明专利
    未知

    公开(公告)号：DE69827801T2

    公开(公告)日：2005-11-03

    申请号：DE69827801

    申请日：1998-02-10

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： PORTER D ,  CHAKAROVA S ,  KNALL JOHAN ,  SPINDT J

    IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  C25D5/48 ,  B23H3/00 ,  H01J1/02 ,  H01J1/62 ,  B44C1/22

    Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.

    5.
    发明专利
    未知

    公开(公告)号：DE69827801D1

    公开(公告)日：2004-12-30

    申请号：DE69827801

    申请日：1998-02-10

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： PORTER D ,  CHAKAROVA S ,  KNALL JOHAN ,  SPINDT J

    IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  C25D5/48 ,  B23H3/00 ,  H01J1/02 ,  H01J1/62 ,  B44C1/22

    Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.

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