公开(公告)号：DE69835157T2

公开(公告)日：2007-05-31

申请号：DE69835157

申请日：1998-09-03

Applicant: CANDESCENT TECH CORP

Inventor： CHAKRAVORTY K

IPC: H01J1/02 ,  H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J9/14 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12

Abstract: A structure and method for forming an anodized row electrode for a field emission display device. In one embodiment, the present invention comprises depositing a resistor layer over portions of a row electrode. Next, an inter-metal dielectric layer is deposited over the row electrode. In the present embodiment, the inter-metal dielectric layer deposited over portions of the resistor layer and over pad areas of the row electrode. After the deposition of the inter-metal dielectric layer, the row electrode is subjected to an anodization process such that exposed regions of the row electrode are anodized. In so doing, the present invention provides a row electrode structure which is resistant to row to column electrode shorts and which is protected from subsequent processing steps.

公开(公告)号：DE69835157D1

公开(公告)日：2006-08-17

申请号：DE69835157

申请日：1998-09-03

Applicant: CANDESCENT TECH CORP

Inventor： CHAKRAVORTY K

IPC: H01J1/02 ,  H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J9/14 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12

Abstract: A structure and method for forming an anodized row electrode for a field emission display device. In one embodiment, the present invention comprises depositing a resistor layer over portions of a row electrode. Next, an inter-metal dielectric layer is deposited over the row electrode. In the present embodiment, the inter-metal dielectric layer deposited over portions of the resistor layer and over pad areas of the row electrode. After the deposition of the inter-metal dielectric layer, the row electrode is subjected to an anodization process such that exposed regions of the row electrode are anodized. In so doing, the present invention provides a row electrode structure which is resistant to row to column electrode shorts and which is protected from subsequent processing steps.

公开(公告)号：DE1038303T1

公开(公告)日：2001-04-19

申请号：DE98956230

申请日：1998-10-27

Applicant: CANDESCENT TECH CORP

Inventor： CLEEVES M ,  SPINDT J ,  BARTON W ,  CHAKRAVORTY K ,  LEARN J ,  OBERG J

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  H01J1/30

Abstract: An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode.