Abstract:
The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength ? perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.
Abstract:
The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength ? perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.
Abstract:
Provided is a method for manufacturing a surface-emitting laser (100) capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate (105) a plurality of semiconductor layers including an active layer (130) and a first semiconductor layer (160) having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer (165) on a first semiconductor layer (160) to form the photonic crystal structure, forming a plurality of microholes (170) in the second semiconductor layer (165), forming a low refractive index portion (175) in a part of the first semiconductor layer (160) via the plurality of microholes (170) thereby to provide the first semiconductor layer (160) with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer (180) by crystal regrowth from a surface of the second semiconductor layer (165).
Abstract:
The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength λ perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.
Abstract:
Provided is a high-output surface-emitting laser (100) capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate (105), which includes a lower semiconductor multilayer reflection mirror (110), an active layer (130), and an upper semiconductor multilayer reflection mirror (150), wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer (170) having a two-dimensional photonic crystal structure comprised of a high and low refractive index (175) portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole (180) which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion (175) formed in the first semiconductor layer (170).
Abstract:
Provided is a surface emitting laser (100) or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region (170) formed by etching a part of the upper mirror; and a second etching region (172) formed by performing etching from a bottom portion of the first etching region to a semiconductor layer (115) for forming a current confining structure (116), in which a depth of the second etching region is smaller than a depth of the first etching region. Side-wall oxidation of the semiconductor layer (115) results in a circular current aperture and a stepped emitting surface (150) is provided for discrimination of higher order lateral modes.
Abstract:
PROBLEM TO BE SOLVED: To provide a surface-emitting laser, or the like, in which the center of gravity direction of a far-field pattern (FFP) can be tilted against the normal direction of a substrate configuring the surface-emitting laser.SOLUTION: A lower reflector 112, an active layer 114 and an upper reflector 116 are laminated on a substrate 110, and a surface relief structure 150 is provided above the light-emitting surface 142 in the upper reflector 116 of a surface-emitting laser 100. The surface relief structure 150 is formed of a material through which the light emitted from the surface-emitting laser 100 can transmit at least partially. A plurality of regions having a predetermined optical thickness in the normal direction of the substrate 110 are provided contiguously in the in-plane direction of the substrate 110. Distribution of the optical thickness in the in-plane direction of the substrate 110 is an asymmetrical distribution of the optical thickness with respect to the central axis of the light-emitting region of the surface-emitting laser 100.