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公开(公告)号：WO2008047818A8
公开(公告)日：2008-06-19
申请号：PCT/JP2007070220
申请日：2007-10-10
Applicant: CANON KK , INAO YASUHISA , ITO TOSHIKI , MIZUTANI NATSUHIKO
Inventor： INAO YASUHISA , ITO TOSHIKI , MIZUTANI NATSUHIKO
IPC: G03F9/00
CPC classification number: G03F9/7038 , B82Y10/00 , G03F7/70325 , G03F7/7035 , G03F7/70866 , G03F9/7096 , Y10S430/167
Abstract: A near-field exposure apparatus includes a near-field exposure mask (101), a mechanism configured to place a substrate (102) to be exposed, opposed to the near-field exposure mask, a mechanism (107) configured to perform relative alignment of the near-field exposure mask and 'the substrate to be exposed, a mechanism configured to closely contacting the near-field exposure mask and the substrate to be exposed, with each other, a mechanism (109) configured to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device (105) configured to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed, wherein the soft X- ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.
Abstract translation: 近场曝光装置包括：近场曝光掩模（101）;被配置为放置与近场曝光掩模相对的待曝光衬底（102）的机构;机构（107），被配置为执行相对对准 （109），配置为将曝光光线投影到所述近场曝光掩模和所述待曝光基板的机构（109），所述机构配置为使所述近场曝光掩模和所述待曝光基板彼此紧密接触， 近场曝光掩模以及软X射线照射装置（105），所述软X射线照射装置（105）被配置为去除在所述近场曝光掩模和所述待曝光基板中的至少一个中充入的静电，其中所述软X射线照射装置是 设置在远离待曝光基板的近场曝光掩模的一侧。
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公开(公告)号：WO2004023211A3
公开(公告)日：2004-10-14
申请号：PCT/JP0311357
申请日：2003-09-05
Applicant: CANON KK
Inventor： INAO YASUHISA , KURODA RYO , MIZUTANI NATSUHIKO
CPC classification number: G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/2014 , G03F7/70325 , G03F7/70566
Abstract: An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask, wherein nonpolarized exposure light from a light source is projected onto an exposure mask having a light blocking film and a plurality of rectangular openings formed in the light blocking film, the openings having a width in a widthwise direction not greater than one-third of the exposure light and having its lengthwise directions extending in two or more directions along the mask surface, so that near-field light escaping from the openings is produced thereby to perform exposure of a pattern on the basis of the openings.
Abstract translation: 一种曝光方法，用于基于从掩模的开口逸出的近场光来曝光工件，其中来自光源的非偏振曝光光被投影到具有遮光膜和形成在其上的多个矩形开口的曝光掩模上 所述遮光膜的开口在宽度方向上的宽度不大于曝光光线的三分之一，并且其长度方向沿着掩模表面在两个或更多个方向上延伸，使得从开口逸出的近场光 由此产生基于开口的图案的曝光。
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公开(公告)号：AU2003265176A8
公开(公告)日：2004-03-29
申请号：AU2003265176
申请日：2003-09-05
Applicant: CANON KK
Inventor： INAO YASUHISA , MIZUTANI NATSUHIKO , KURODA RYO
Abstract: An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.
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公开(公告)号：AU2003265176A1
公开(公告)日：2004-03-29
申请号：AU2003265176
申请日：2003-09-05
Applicant: CANON KK
Inventor： MIZUTANI NATSUHIKO , INAO YASUHISA , KURODA RYO
Abstract: An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.
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5.发明专利
公开(公告)号：DE60143728D1
公开(公告)日：2011-02-10
申请号：DE60143728
申请日：2001-03-02
Applicant: CANON KK
Inventor： INAO YASUHISA , KURODA RYO , YAMAGUCHI TAKAKO
IPC: G03F1/60 , G03F1/68 , G03F7/20 , G03F9/00 , H01L21/027
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Patent Agency Ranking
公开(公告)号：AT515084T
公开(公告)日：2011-07-15
申请号：AT09009750
申请日：2009-07-28
Applicant: CANON KK
Inventor： IKUTA MITSUHIRO , INAO YASUHISA , YAMAGUCHI TAKAKO
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公开(公告)号：EP1782456A4
公开(公告)日：2008-07-30
申请号：EP05755684
申请日：2005-06-24
Applicant: CANON KK
Inventor： INAO YASUHISA , KURODA RYO , MIZUTANI NATSUHIKO
IPC: H01L21/027 , G03F1/60 , G03F7/20 , G03F9/00
CPC classification number: G03F7/7035 , B82Y10/00 , G03F1/50 , G03F1/60 , G03F7/2014 , G03F7/70325 , G03F7/70433 , G03F7/70691 , G03F9/703 , G03F9/7053 , G03F9/7088
Abstract: Disclosed is an exposure apparatus, an exposure method and an exposure mask, for improved optical lithography. Specifically, in accordance with one preferred form of the invention, the exposure apparatus is arranged to be used with an exposure mask having an elastically deformable holding member and a light blocking film provided on the holding member and being formed with an opening pattern, wherein for exposure the exposure mask is flexed to be brought into contact with an object to be exposed. The exposure apparatus includes a distance detecting system for detecting a distance between the exposure mask before being flexed and the object to be exposed, and a distance controlling system for controlling the distance between the exposure mask before being flexed and the object to be exposed, on the basis of a signal from the distance detecting system.
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公开(公告)号：JP2002333602A
公开(公告)日：2002-11-22
申请号：JP2001135697
申请日：2001-05-07
Applicant: CANON KK
Inventor： INAO YASUHISA , KURODA AKIRA
Abstract: PROBLEM TO BE SOLVED: To provide an optical element which includes a photonic crystalline structure and can be reduced in size and weight and integrated to a higher scale and an optical control method using the same. SOLUTION: The optical element has a substrate having the photonic crystalline structure which is formed of two optical media, an optical medium 101 variable in refractive index and an optical medium 102 substantially invariable in the refractive index and of which the refractive index changes periodically and a refractive index control means 103 which controls the refractive index of at least a portion of the optical medium 101 variable in the refractive index. The defect of the refractive index periodic structure or another refractive index periodic structure is introduced into the photonic crystalline structure by the refractive index control means 103, by which a photonic band gap is changed and the state of incident light can be controlled.
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公开(公告)号：JP2002062489A
公开(公告)日：2002-02-28
申请号：JP2000251598
申请日：2000-08-22
Applicant: CANON KK
Inventor： KURODA AKIRA , SEKI JUNICHI , SHIMADA YASUHIRO , YAMAGUCHI TAKAKO , INAO YASUHISA
IPC: G01B11/00 , G02B26/02 , G03F9/00 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide an optical modulating device which is applicable to a near field region and realize optical modulation having no wavelength dependence and high-precision optical modulation free of the cause of noise due to wavelength variation even when incoherent interference light and laser light having little cause of noise are used, an optical switch by the device, a movement amount detecting device, a distance measuring instrument using the same device, a positioning device and a semiconductor exposure device using the device, and their method. SOLUTION: Two 1st and 2nd periodic structures having a period smaller than the wavelength of the light emitted by a light source are arranged face to face while put closer up to a interval below the wavelength; and the two periodic structures are relatively moved and the intensity of the transmitted light from the light source which has passed between the two periodic structures is modulated.
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公开(公告)号：JP2003270132A
公开(公告)日：2003-09-25
申请号：JP2003004491
申请日：2003-01-10
Applicant: CANON KK
Inventor： KURODA AKIRA , MIZUTANI NATSUHIKO , YAMAGUCHI TAKAKO , INAO YASUHISA , YAMADA TOMOHIRO
Abstract: PROBLEM TO BE SOLVED: To solve problems of a conventional localized plasmon resonance sensor using metal particles such that the peak strength of an absorbance spectrum decreases and the width of the spectrum becomes broad due to variations in size of the metal particles and random configuration thereof, and limitation of the sensor's sensitivity due to small changes in a signal for detecting changes in a medium near the metal particles. SOLUTION: The sensor device comprises a metal film having a plurality of openings, a sensor material located in the opening, a light source, and a photodetector detecting light which is transmitted through or reflected by the opening after irradiated from the light source, wherein the openings is periodically located in a first direction of the metal film, and the size and interval of the openings in the direction are not greater than the wavelength of the light. A sensor medium comprises the metal film and the sensor material, wherein the size and interval of the openings which are periodically located in the first direction are not greater than 200 nm. An inspection method uses the sensor device or the sensor medium. COPYRIGHT: (C)2003,JPO
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