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1.发明申请MANUFACTURING METHOD OF RADIATION DETECTING APPARATUS, AND RADIATION DETECTING APPARATUS AND RADIATION IMAGING SYSTEM 审中-公开辐射检测装置的制造方法以及辐射检测装置和辐射成像系统
公开(公告)号：WO2009060968A3
公开(公告)日：2009-12-23
申请号：PCT/JP2008070370
申请日：2008-11-04
Applicant: CANON KK , ISHII TAKAMASA , MOCHIZUKI CHIORI , WATANABE MINORU
Inventor： ISHII TAKAMASA , MOCHIZUKI CHIORI , WATANABE MINORU
IPC: H01L27/148
CPC classification number: H01L27/14663
Abstract: The object of the invention is to realize a light radiation-detecting apparatus including a step of preparing a matrix array including a substrate, an insulating layer arranged on the substrate, a plurality of pixels arranged on the insulating layer, wherein the pixel includes a conversion element converting an incident radiation into an electric signal, and connection electrode arranged at a periphery of the plurality of pixels, fixing a flexible supporting member for covering the plurality of pixels to the matrix array at a side opposite to the substrate, and releasing the substrate from the matrix array.
Abstract translation: 本发明的目的是实现一种光辐射检测设备，包括准备矩阵阵列的步骤，所述矩阵阵列包括衬底，布置在所述衬底上的绝缘层，布置在所述绝缘层上的多个像素，其中所述像素包括转换 将入射的放射线转换为电信号的元件;以及配置在所述多个像素的周围的连接电极，在所述基板的相反侧将用于覆盖所述多个像素的挠性支撑部件固定在所述矩阵阵列上， 来自矩阵阵列。
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公开(公告)号：DE112014005663T5
公开(公告)日：2016-09-15
申请号：DE112014005663
申请日：2014-10-30
Applicant: CANON KK
Inventor： ONO SHINJI , ISHII TAKAMASA , NISHIBE KOTA
IPC: G01T1/20
Abstract: Eine Strahlungserfassungsvorrichtung, in der eine fehlerhafte Adhäsion zwischen einem Adhäsivelement und Endabschnitten einer Mehrzahl von Sensorsubstraten reduziert ist. Eine Strahlungserfassungsvorrichtung hat eine Mehrzahl von Sensorsubstraten, die angrenzend aneinander vorgesehen sind, wobei jedes Sensorsubstrat eine Seitenoberfläche hat, die eine erste Oberfläche, wo eine Mehrzahl von fotoelektrischen Umwandlungselemente, die an einem Feld angeordnet sind, und eine gegenüber liegende zweite Oberfläche miteinander verbindet; einen Szintillator, der an einer Seite der ersten Oberflächen der Mehrzahl des Sensorsubstrate vorgesehen ist; und ein blattartiges Adhäsivelement zum aneinander Anhaften der Mehrzahl der Sensorsubstrate und des Szintillators, wobei zwischen der Mehrzahl der Sensorsubstrate das blattartige Adhäsivelement sich an den ersten Oberflächen und an zumindest Abschnitten der Seitenoberflächen derart anhaftet, dass das blattartige Adhäsivelement sich von den ersten Oberflächen zu den zumindest Abschnitten der Seitenoberflächen erstreckt und kontinuierlich daran anhaftet.
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3.发明公开SOLID STATE IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP APPARATUS 有权RÖHRENLOSEBILDERFASSUNGSVORRICHTUNG UNDSTRAHLUNGSBILD-ERFASSUNGSVORRICHTUNG
公开(公告)号：EP1593160A4
公开(公告)日：2006-03-15
申请号：EP04709743
申请日：2004-02-10
Applicant: CANON KK
Inventor： WATANABE MINORU , MORISHITA MASAKAZU , MOCHIZUKI CHIORI , ISHII TAKAMASA , NOMURA KEIICHI
IPC: G01T1/20 , G01T1/24 , H01L27/12 , H01L27/14 , H01L27/146 , H01L29/786 , H04N5/32 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/335
CPC classification number: H01L27/12 , H01L27/14643 , H04N5/32
Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed overlaminated and arranged onto at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device laminated ontoon the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
Abstract translation: 在具有受光器件的固态摄像装置和与形成在一个像素中的受光器件连接的一个以上的薄膜晶体管的情况下，在该薄膜晶体管的至少一部分上形成有受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光电检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。
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公开(公告)号：EP1910870A4
公开(公告)日：2016-12-14
申请号：EP06781842
申请日：2006-07-21
Applicant: CANON KK
Inventor： MOCHIZUKI CHIORI , WATANABE MINORU , ISHII TAKAMASA
IPC: H01L27/146 , G01T1/20 , G01T1/24 , H04N5/32
CPC classification number: H01L27/14663 , H01L27/14623 , H01L27/14692 , H01L31/117 , H01L31/119 , H04N5/32
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公开(公告)号：GB2530176A
公开(公告)日：2016-03-16
申请号：GB201515895
申请日：2015-09-08
Applicant: CANON KK
Inventor： ISHII TAKAMASA , INOUE MASATO , NISHIBE KOTA , ONO SHINJI
Abstract: An X-ray CT radiation imaging apparatus includes a radiation imaging panel including a plurality of imaging substrates and a scintillator, a surrounding housing and including upper and lower plate-shaped portions. A first support member 120, supported on columns or pillars to secure circuit 130 in a recess, is located between the scintillator and the lower plate-shaped portion of the housing via the plurality of imaging substrates. A second support member or members 140 is located between the scintillator and the upper plate-shaped portion of the housing so as to support the scintillator periphery and protect from deformation.
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Patent Agency Ranking
公开(公告)号：DE102015115121A1
公开(公告)日：2016-03-10
申请号：DE102015115121
申请日：2015-09-09
Applicant: CANON KK
Inventor： ISHII TAKAMASA , INOUE MASATO , NISHIBE KOTA , ONO SHINJI
Abstract: Ein Strahlungsbilderzeugungsgerät (100) zum Abfühlen eines Strahlungsbilds weist ein Strahlungsbilderzeugungspanel (110) mit einer Vielzahl von Bilderzeugungssubstraten (112) und einem Szintillator (114), der eine erste Fläche (S1) und eine zweite Fläche (S2) hat, die zueinander entgegengesetzt sind, ein Gehäuse (150), das so gestaltet ist, dass es das Strahlungsbilderzeugungspanel (110) beherbergt, und das einen ersten plattenförmigen Abschnitt und einen zweiten plattenförmigen Abschnitt aufweist, ein erstes Tragebauteil (120), das sich zwischen der ersten Fläche (S1) des Szintillators (114) und dem ersten plattenförmigen Abschnitt des Gehäuses (150) befindet, um so den Szintillator (114) über die Vielzahl von Bilderzeugungssubstraten (112) zu tragen, und ein zweites Tragebauteil (140) auf, das sich zwischen der zweiten Fläche (S2) des Szintillators (114) und dem zweiten plattenförmigen Abschnitt des Gehäuses (150) befindet, um so den Szintillator (114) zu tragen.
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公开(公告)号：DE602004026795D1
公开(公告)日：2010-06-10
申请号：DE602004026795
申请日：2004-01-26
Applicant: CANON KK
Inventor： ISHII TAKAMASA , MORISHITA MASAKAZU , YAMAZAKI TATSUYA , TSUJII OSAMU , HIRAI AKIRA , TAMURA TOSHIKAZU , NONAKA HIDEKI
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公开(公告)号：DE602004023179D1
公开(公告)日：2009-10-29
申请号：DE602004023179
申请日：2004-02-10
Applicant: CANON KK
Inventor： WATANABE MINORU , MORISHITA MASAKAZU , MOCHIZUKI CHIORI , ISHII TAKAMASA , NOMURA KEIICHI
IPC: G01T1/20 , H01L27/146 , G01T1/24 , H01L27/12 , H01L27/14 , H01L29/786 , H04N5/32 , H04N5/365 , H04N5/369 , H04N5/374
Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
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公开(公告)号：EP1911094A4
公开(公告)日：2012-03-14
申请号：EP06768394
申请日：2006-07-25
Applicant: CANON KK
Inventor： WATANABE MINORU , MOCHIZUKI CHIORI , ISHII TAKAMASA
IPC: H01L27/146 , G01T1/20 , G01T1/24 , H01L27/14 , H01L27/144 , H04N5/32 , H04N5/335 , H04N5/369
CPC classification number: H01L27/14658 , G01T1/2018 , H01L27/14663 , H01L31/119
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10.发明公开RADIATION IMAGE PICK-UP DEVICE AND METHOD THEREFOR, AND RADIATION IMAGE PICK-UP SYSTEM 有权辐射图像检测装置及其方法和放射线摄影系统
公开(公告)号：EP1687971A4
公开(公告)日：2010-04-21
申请号：EP04799716
申请日：2004-11-10
Applicant: CANON KK
Inventor： ISHII TAKAMASA , MORISHITA MASAKAZU , MOCHIZUKI CHIORI , WATANABE MINORU , NOMURA KEIICHI
CPC classification number: H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
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