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公开(公告)号:DE69708208D1
公开(公告)日:2001-12-20
申请号:DE69708208
申请日:1997-06-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: A scanning exposure apparatus, wherein a pattern of a surface of a first object (1) placed on a first stage (4) is illuminated with exposure light (6) from a slit aperture of an illumination system, and wherein the pattern of the first object is projected through a projection optical system (2) on to a surface of a second object (3) placed on a second stage (5) while relatively and scanningly moving the first and second stages in a widthwise direction of the slit aperture, in a timed relation and at a speed ratio corresponding to a projection magnification of the projection optical system. The apparatus includes a reference plate (10,11) provided in a portion of one of the first and second stages and having a predetermined mark (50,51), a reflection surface plate (12) provided in a portion of the other of the first and second stages, without the reference plate, and a surface position detecting system for projecting the mark of the reference plate on to the reflection surface plate through the projection optical system and, while moving one of the first and second stages in a direction of an optical axis, for detecting the position of the surface of the second object in the direction of optical axis on the basis of an image reflected by the reflection surface plate.
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公开(公告)号:DE68924667T2
公开(公告)日:1996-03-28
申请号:DE68924667
申请日:1989-05-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA , SUZUKI AKIYOSHI , MURAKI MASATO
Abstract: A projection exposure apparatus including a mask stage (70) for supporting a mask (7), a wafer stage (10) for supporting a wafer (9), and a projection optical system (6,8) for projecting on the wafer an image of a circuit pattern of the mask is disclosed. There are provided a surface position detecting system (18) for detecting a position of a surface of the wafer with respect to a direction of an optical axis of the projection optical system, an adjusting device (20) for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, an outputting portion operable to direct a light beam to a reflection surface (17), provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system. Focus position detecting system operates to detect the focus position of the projection optical system, on the basis of the signal from the outputting portion, and a control system (19) operates to control the adjusting device on the basis of an output of the focus position detecting system and an output of the surface position detecting system.
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公开(公告)号:DE69708208T2
公开(公告)日:2002-06-06
申请号:DE69708208
申请日:1997-06-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: A scanning exposure apparatus, wherein a pattern of a surface of a first object (1) placed on a first stage (4) is illuminated with exposure light (6) from a slit aperture of an illumination system, and wherein the pattern of the first object is projected through a projection optical system (2) on to a surface of a second object (3) placed on a second stage (5) while relatively and scanningly moving the first and second stages in a widthwise direction of the slit aperture, in a timed relation and at a speed ratio corresponding to a projection magnification of the projection optical system. The apparatus includes a reference plate (10,11) provided in a portion of one of the first and second stages and having a predetermined mark (50,51), a reflection surface plate (12) provided in a portion of the other of the first and second stages, without the reference plate, and a surface position detecting system for projecting the mark of the reference plate on to the reflection surface plate through the projection optical system and, while moving one of the first and second stages in a direction of an optical axis, for detecting the position of the surface of the second object in the direction of optical axis on the basis of an image reflected by the reflection surface plate.
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公开(公告)号:DE69329611T2
公开(公告)日:2001-05-03
申请号:DE69329611
申请日:1993-08-18
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
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公开(公告)号:DE69329611D1
公开(公告)日:2000-12-07
申请号:DE69329611
申请日:1993-08-18
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
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公开(公告)号:DE68924667D1
公开(公告)日:1995-12-07
申请号:DE68924667
申请日:1989-05-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA , SUZUKI AKIYOSHI , MURAKI MASATO
Abstract: A projection exposure apparatus including a mask stage (70) for supporting a mask (7), a wafer stage (10) for supporting a wafer (9), and a projection optical system (6,8) for projecting on the wafer an image of a circuit pattern of the mask is disclosed. There are provided a surface position detecting system (18) for detecting a position of a surface of the wafer with respect to a direction of an optical axis of the projection optical system, an adjusting device (20) for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, an outputting portion operable to direct a light beam to a reflection surface (17), provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system. Focus position detecting system operates to detect the focus position of the projection optical system, on the basis of the signal from the outputting portion, and a control system (19) operates to control the adjusting device on the basis of an output of the focus position detecting system and an output of the surface position detecting system.
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公开(公告)号:JPH1064814A
公开(公告)日:1998-03-06
申请号:JP12633897
申请日:1997-04-30
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
IPC: G03F7/20 , G03F9/00 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a surface position detecting device which can detect the positional information of the surface of a wafer in the optical axis direction with high accuracy and can projection align a circuit pattern on a reticle surface upon the the surface of the wafer with high accuracy. SOLUTION: A pattern on the surface of a first object 1 placed on a first stage 4 is irradiated with light from a lighting means and projected upon the surface of a second object 3 placed on a second state 5 by means of an projection optical system 2. Reference plates 10 and 11 carrying prescribed marks are provided on either one of the stages 4 and 5 and a reflecting surface plate 12 is provided on the other stage provided with no reference plate. In addition, a TTL surface position detecting system which finds the position of the second object 3 in the optical axis direction by projecting the marks on plates 10 and 12 upon the reflecting surface plate 12 through the projection optical system and, at the same time, moving the first or second stage 4 or 5 in the optical axis direction and utilizing the image of the marks reflected by the plate 12 when the stage 4 or 5 is moved in the optical axis direction is provided.
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公开(公告)号:JPS63220521A
公开(公告)日:1988-09-13
申请号:JP5304287
申请日:1987-03-10
Applicant: CANON KK
Inventor: SUZUKI AKIYOSHI , KAWASHIMA HARUNA
Abstract: PURPOSE:To enable correction at the same time as the variation of the focal position of a projection optical system by detecting scattered light from a mark formed onto a wafer. CONSTITUTION:For detect relative positional displacement, each luminous flux emitted from imaging lenses 11, 11' is reflected by a galvano-mirror 12 vibrated by using a motor 13, and the image of a focusing detecting mark 6 shaped onto a wafer 4 is scanned onto slits 14, 14' positioned onto an imaging surface. Light passing through the slits is guided to photomultipliers (PMT) 15, 15'. Electrical pulse signals only of the number of the edges of the mark 6 in detection light are acquired in the photomultipliers 15, 15', and the position of the wafer 4 is shifted in the direction of the optical axis of a projection lens 3 so that the pulse signal train is detected similarly with time. Accordingly, the wafer 4 can be brought to the position of best focusing to the projection lens 3.
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公开(公告)号:JP2003249446A
公开(公告)日:2003-09-05
申请号:JP2003080365
申请日:2003-03-24
Applicant: CANON KK
Inventor: KATAOKA YOSHIHARU , KAWASHIMA HARUNA , YAMADA YUICHI
IPC: G03F7/22 , G03F9/00 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide an exposure method for enabling a satisfactory transfer even if detection cannot be made or a detection error becomes large in some focus sensors when a region to be exposed is positioned at an exposure position. SOLUTION: When exposure is to be made at an exposure position where some focus sensors are ineffective, for example the periphery of a wafer, focus measurement is carried out at a spare measurement position where all focus sensors become effective before exposure, the focus measurement value is corrected based on an error due to a pattern structure obtained in advance, and the posture of the wafer is adjusted based on the corrected result. COPYRIGHT: (C)2003,JPO
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公开(公告)号:JP2002181512A
公开(公告)日:2002-06-26
申请号:JP2001346666
申请日:2001-11-12
Applicant: CANON KK
Inventor: KAWASHIMA HARUNA
IPC: G01B11/00 , G03F7/20 , G03F9/02 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To obtain a surface position detecting method and a projection aligner using the same that detects surface position information in an optical axis direction of a wafer surface to position a pattern area of the wafer in an allowable depth of focus of a projection lens and can manufacture a semiconductor device with high density. SOLUTION: When a pattern on a first material is projected to a pattern area on a second material through a projection optical system and a surface shape of the pattern area is measured by position information of a plurality of measuring points in the pattern area on the second material, measurement values of the surface shape are separated into an error component produced by a topographic change in the pattern area and an error component produced by measurement error quantity of an optical factor, and the measurement error quantity of the optical factor is calculated as a compensational value at a plurality of the measuring points, and the surface position of the pattern area is determined by adjusting measurement values at a plurality of the measuring points using the compensational values.
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