公开(公告)号：KR20200140717A

公开(公告)日：2020-12-16

申请号：KR20200064679

申请日：2020-05-29

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: B29C59/02 ,  B29C59/00 ,  B29L31/34 ,  H01L21/30

Abstract: 성형장치는, 기판의하면을흡착하는복수의흡착영역을갖고상기복수의흡착영역에의해상기기판을흡착함으로써상기기판을보유지지하도록구성되는기판보유지지부, 및성형처리의실행을제어하며복수의흡착영역각각의흡착력을독립적으로제어하도록구성되는제어부를포함한다. 제어부는, 이형단계에서, 몰드가조성물로부터마지막으로분리되는최종이형점이몰드의패턴면의중심과일치되게하도록, 복수의흡착영역각각의흡착력을제어한다.

公开(公告)号：DE102020106655A1

公开(公告)日：2020-09-17

申请号：DE102020106655

申请日：2020-03-11

Applicant: CANON KK

Inventor： KOYAMA YASUSHI ,  SATO TAKAHIRO ,  ITSUJI TAKEAKI ,  YOSHIOKA TOSHIFUMI ,  TAKAMI EIICHI ,  KAIFU NORIYUKI ,  IBA JUN ,  KURASHIMA REI

IPC: G01V3/12

Abstract: Ein beweglicher Körper umfasst ein Abbildungssystem, das ein durch eine Terahertzwelle ausgebildetes Bild erlangt, wobei das Bild ein Bild ist, das durch Aufnehmen eines Prüfgegenstands innerhalb des beweglichen Körpers erhalten wird.

公开(公告)号：JP2003086077A

公开(公告)日：2003-03-20

申请号：JP2001274055

申请日：2001-09-10

Applicant: CANON KK

Inventor： SATO TAKAHIRO ,  TSUKAMOTO TAKEO

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element, an electron source, and an image forming device, capable of coping with high efficiency, high reliability, high process yield, high-speed driving, low power consumption, a wide area substrate, and high definition. SOLUTION: An insulator 4 having height in which the position in the direction almost perpendicularly crossing to a substrate 1 is present on an anode side than a cathode 3 and an extraction electrode 2 is installed between the cathode 3 and the extraction electrode 2, on a substrate 1.

公开(公告)号：JP2002131680A

公开(公告)日：2002-05-09

申请号：JP2000328000

申请日：2000-10-27

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: B41J2/44 ,  G02B26/08 ,  G02B26/10

Abstract: PROBLEM TO BE SOLVED: To provide a light deflection device which is small-sized and is of low noise. SOLUTION: In the light deflection device, a semiconductor laser 106 is mounted near or on an immobile part of a piezoactuator which is formed on a semiconductor substrate 101 and has a mirror 104 and light emitted from the semiconductor laser 106 is reflected by the mirror 104 to drive the piezoactuator. Thereby the light emitted by the semiconductor laser 106 can be deflected.

公开(公告)号：JP2001188146A

公开(公告)日：2001-07-10

申请号：JP2000000006

申请日：2000-01-04

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: G02B6/42 ,  G02B6/122

Abstract: PROBLEM TO BE SOLVED: To provide an optical coupling method and device improving reliability of optical coupling by physically and directly sticking a flexible optical wave- guide and optical parts of a surface type optical element, etc., making it possible to use the optical wave-guide and the surface type optical element, etc., as an array and easily securing large capacity information transmission. SOLUTION: In an optical circuit where a surface type optical element 109 is mounted directly or through a second substrate 108 on a first substrate 101, the surface type optical element 109 is coupled optically with the flexible optical wave-guide 202 by physically and directly sticking the surface type optical element 109 with the end part of the flexible optical wave-guide 202 whose core 105 is terminated and processed.

公开(公告)号：JP2003208845A

公开(公告)日：2003-07-25

申请号：JP2002005697

申请日：2002-01-15

Applicant: CANON KK

Inventor： KITAMURA SHIN ,  KUBOTA OICHI ,  SATO TAKAHIRO

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an under-gate type electron emission element capable of increasing an efficiency by lowering an ineffective current flowing in a gate electrode and providing, with a high reproducibility, the electron emission element with a small beam diameter by preventing emission electrons from dispersing. SOLUTION: An electron emission member 5 installed on the upper surface of a cathode electrode 4 is moved backward from the end part of the cathode electrode 4 on a side opposed to the gate electrode 2, and disposed by controlling the width of the a backward movement area. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002344080A

公开(公告)日：2002-11-29

申请号：JP2001145107

申请日：2001-05-15

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: G01C19/66 ,  H01S5/10

Abstract: PROBLEM TO BE SOLVED: To simply manufacture a semiconductor ring laser, having low current threshold and high reliability. SOLUTION: A method for manufacturing the polygonal semiconductor ring laser comprises steps of growing an n-type AlGaAs clad layer 11, an active layer region 12, an AlAs-current constriction layer 13, and a p-type AlGaAs clad layer 14 on an n-type GaAs substrate in Fig. (a); and patterning a first resist 1 thereon, in a shape of an optical waveguide. The method further comprises the step of dry etching all the clad layer 14 in Fig. (b). In this case, the narrowing layer 13 is utilized as an etching stop layer. The method also comprises the step of patterning a second resist 2, so as to expose a part which becomes the corner mirror of the polygonal semiconductor ring laser in Fig. (c). The method also comprises the step of exposing the region 12, and the layer 11 only at the mirror with the first and second resists 1 and 2 as masks in Fig. (d). The method also comprises the step of selectively oxidizing the layer 13 in a water vapor in Fig. (e).

公开(公告)号：JP2002289959A

公开(公告)日：2002-10-04

申请号：JP2001088932

申请日：2001-03-27

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: H01L21/60 ,  H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical element, for which a semiconductor optical device is mounted on a substrate with high position accuracy, and to provide a manufacturing method therefor. SOLUTION: On the electrodes 3 and 5 of the semiconductor optical device 1 and the substrate 2, solders 4 and 6 are formed by using the method of patterning, so as to accurately fit the shape of the solder 4 formed on the semiconductor optical device 1 and the shape of the solder 5 formed on the substrate 2 without a clearance. The semiconductor optical device 1 and the substrate 2 are positioned regarding the planar direction of the substrate 2, by fitting the solders 4 and 6 of both and bringing them into contact. Thereafter, the solders 4 and 6 are fused and solidified and the semiconductor optical device 1 and the substrate 2 are adhered in a prescribed state.

公开(公告)号：JP2002313783A

公开(公告)日：2002-10-25

申请号：JP2001114346

申请日：2001-04-12

Applicant: CANON KK

Inventor： SATO TAKAHIRO

IPC: H01L21/302 ,  H01L21/3065 ,  H01S5/10

Abstract: PROBLEM TO BE SOLVED: To form a polygon semiconductor ring laser wherein high alignment precision is held with a simple process. SOLUTION: In Fig. 1 (d), dry etching is added by using first resist 1 and second resist 2 as masks, and an active layer region 12 and an N-type AlGaAs clad layer 11 are exposed only in a corner mirror part. Condition of the dry etching is the same as condition of dry etching of a first time. In this case, the layer 11 may not be etched wholly. By the above process, reflectivity at the corner mirror part is increased. In the corner mirror part, etching is performed by self alignment while a pattern of the first resist 1 is maintained, so that position deviation is not generated throughout dry etching of two times. Finally in Fig. (e), the first resist 1 and the second resist 2 are exfoliated by using a remover.

公开(公告)号：JP2001251016A

公开(公告)日：2001-09-14

申请号：JP2000328168

申请日：2000-10-27

Applicant: CANON KK

Inventor： SATO TAKAHIRO ,  SAKATA HAJIME

IPC: H01L21/205 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/42

Abstract: PROBLEM TO BE SOLVED: To realize a surface emitting semiconductor laser which utilizes effectively a selectively oxidized layer, has superior heat characteristics and is integrated with a current bottle neck structure which can be manufactured by a simple processing. SOLUTION: This plane light emitting semiconductor laser comprises: an active layer region 113 formed on a growing substrate 101; two vertical mirror layers 111, 112 constituting a vertical resonator across the active layer region 113; a selectively oxidized layer 114 which is provided on a side counter to the substrate 101 of the active layer region 113, and is insulated by oxidizing partially selectively; and current injecting means 121, 122 for injecting a current into the active layer region 113, and has a part formed by removing a semiconductor up to an upper surface or the course of the selectively oxidized layer 114 with the selectively oxidized layer 114 as an etching stop layer. The selectively oxidized layer 114 serves as both a current miniature layer of the injected current and an insulated film for the current injecting means 121, 122.