公开(公告)号：DE69911118T2

公开(公告)日：2004-07-08

申请号：DE69911118

申请日：1999-06-17

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  TANIKAWA ISAO ,  NAKAGAWA KATSUMI ,  SHOJI TATSUMI ,  UKIYO NORITAKA ,  IWASAKI YUKIKO

IPC: H01L31/04 ,  C23C16/01 ,  C30B33/00 ,  H01L21/762 ,  H01L31/18 ,  C23C14/00 ,  C23C16/00

公开(公告)号：AU2003269502A1

公开(公告)日：2004-05-04

申请号：AU2003269502

申请日：2003-10-10

Applicant: CANON KK

Inventor： ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO ,  MIZUTANI MASAKI

IPC: C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  H01L31/04 ,  H01L31/18

Abstract: A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2x10 18 cm -3 to 5x10 19 cm -3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

公开(公告)号：AU3795999A

公开(公告)日：2000-01-20

申请号：AU3795999

申请日：1999-07-02

Applicant: CANON KK

Inventor： IWANE MASAAKI ,  MIZUTANI MASAKI ,  IWASAKI YUKIKO ,  UKIYO NORITAKA ,  NISHIDA SHOJI ,  NAKAGAWA KATSUMI

IPC: H01L21/205 ,  C30B19/02 ,  C30B19/12 ,  C30B29/06 ,  H01L21/20 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18

Abstract: A crystalline silicon layer is epitaxially grown on a substrate having a porous silicon layer on the surface. In making epitaxial growth by liquid-phase epitaxy, a silicon material is previously dissolved in a melt at a high temperature and then the silicon substrate to be subjected to epitaxy is immersed in the melt. Then, its temperature is gradually lowered, whereby the silicon precipitated from the melt is epitaxially grown on the silicon substrate. In this epitaxy, a substrate having the principal plane of (111)-plane is used as the silicon substrate. This provides a process by which a crystalline silicon layer covering a porous silicon layer completely is epitaxially grown on the porous silicon layer without causing any abnormal growth.

公开(公告)号：AU751353B2

公开(公告)日：2002-08-15

申请号：AU3795999

申请日：1999-07-02

Applicant: CANON KK

Inventor： IWANE MASAAKI ,  NAKAGAWA KATSUMI ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWASAKI YUKIKO ,  MIZUTANI MASAKI

IPC: H01L21/205 ,  C30B19/02 ,  C30B19/12 ,  C30B29/06 ,  H01L21/20 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18

Abstract: A crystalline silicon layer is epitaxially grown on a substrate having a porous silicon layer on the surface. In making epitaxial growth by liquid-phase epitaxy, a silicon material is previously dissolved in a melt at a high temperature and then the silicon substrate to be subjected to epitaxy is immersed in the melt. Then, its temperature is gradually lowered, whereby the silicon precipitated from the melt is epitaxially grown on the silicon substrate. In this epitaxy, a substrate having the principal plane of (111)-plane is used as the silicon substrate. This provides a process by which a crystalline silicon layer covering a porous silicon layer completely is epitaxially grown on the porous silicon layer without causing any abnormal growth.

公开(公告)号：AU4863800A

公开(公告)日：2001-01-18

申请号：AU4863800

申请日：2000-07-14

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  YONEHARA TAKAO ,  TAKAI YASUYOSHI ,  SAKAGUCHI KIYOFUMI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: H01L21/304 ,  H01L21/762 ,  H01L31/18 ,  H01L31/036 ,  H01L49/02

Abstract: The peeling of a thin-film single-crystal from a substrate is carried out in such a manner that the directions of all straight lines made on the surface of the thin-film single-crystal by appearance of planes such as Ç111 on which the single-crystal is most apt to cleave are different from the direction of the front line of the peeled single-crystal. This thin-film single-crystal is utilized to produce a solar cell and a drive circuit member of an image display element. Thus, a method is provided which prevents a decrease in quality and yield of the single-crystal layer caused during the peeling step in which the single-crystal layer used for making a semiconductor device is peeled from the substrate as a thin film. A solar cell module with flexibility comprising a photovoltaic element having a thin-film single-crystal as at least one portion thereof is made in such a manner that the direction in which the module is inherently apt to flex is different from the direction in which the thin-film single-crystal is most apt to cleave. Thus, provided are a thin-film single-crystal solar cell module of high quality, that is, a thin-film single-crystal solar cell module excellent in durability and reliability, because of no occurrence of defects and cracks in the thin-film single-crystal during its production and use, and a method of producing the same.

公开(公告)号：EP1485956A4

公开(公告)日：2009-08-12

申请号：EP03703354

申请日：2003-02-21

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/18 ,  H01L31/04

CPC classification number: C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

公开(公告)号：DE60336640D1

公开(公告)日：2011-05-19

申请号：DE60336640

申请日：2003-02-21

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: C01B33/02 ,  H01L31/04 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/18

公开(公告)号：AU768197B2

公开(公告)日：2003-12-04

申请号：AU4863800

申请日：2000-07-14

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  YONEHARA TAKAO ,  TAKAI YASUYOSHI ,  SAKAGUCHI KIYOFUMI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: H01L21/304 ,  H01L21/762 ,  H01L31/18 ,  H01L31/036 ,  H01L49/02

Abstract: The peeling of a thin-film single-crystal from a substrate is carried out in such a manner that the directions of all straight lines made on the surface of the thin-film single-crystal by appearance of planes such as Ç111 on which the single-crystal is most apt to cleave are different from the direction of the front line of the peeled single-crystal. This thin-film single-crystal is utilized to produce a solar cell and a drive circuit member of an image display element. Thus, a method is provided which prevents a decrease in quality and yield of the single-crystal layer caused during the peeling step in which the single-crystal layer used for making a semiconductor device is peeled from the substrate as a thin film. A solar cell module with flexibility comprising a photovoltaic element having a thin-film single-crystal as at least one portion thereof is made in such a manner that the direction in which the module is inherently apt to flex is different from the direction in which the thin-film single-crystal is most apt to cleave. Thus, provided are a thin-film single-crystal solar cell module of high quality, that is, a thin-film single-crystal solar cell module excellent in durability and reliability, because of no occurrence of defects and cracks in the thin-film single-crystal during its production and use, and a method of producing the same.

公开(公告)号：DE69911118D1

公开(公告)日：2003-10-16

申请号：DE69911118

申请日：1999-06-17

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  TANIKAWA ISAO ,  NAKAGAWA KATSUMI ,  SHOJI TATSUMI ,  UKIYO NORITAKA ,  IWASAKI YUKIKO

IPC: H01L31/04 ,  C23C16/01 ,  C30B33/00 ,  H01L21/762 ,  H01L31/18 ,  C23C14/00 ,  C23C16/00

公开(公告)号：AU2003206139A1

公开(公告)日：2003-09-09

申请号：AU2003206139

申请日：2003-02-21

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/04 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/18

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.