公开(公告)号：WO2006051993A3

公开(公告)日：2006-09-14

申请号：PCT/JP2005020980

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH ,  SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

Inventor： SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

IPC: H01L29/786 ,  H01L21/363 ,  H01L21/428

CPC classification number: H01L29/78693 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Abstract translation: 提供了例如可应用于TFT的有源层的新型无定形氧化物。 无定形氧化物包含微晶。

公开(公告)号：EP1485956A4

公开(公告)日：2009-08-12

申请号：EP03703354

申请日：2003-02-21

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  ISHIHARA SHUNICHI ,  NAKAGAWA KATSUMI ,  SATO HIROSHI ,  YOSHINO TAKEHITO ,  NISHIDA SHOJI ,  UKIYO NORITAKA ,  IWANE MASAAKI ,  IWASAKI YUKIKO

IPC: C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/18 ,  H01L31/04

CPC classification number: C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

公开(公告)号：EP1088913A8

公开(公告)日：2001-06-06

申请号：EP00308254

申请日：2000-09-21

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  NISHIDA SHOJI

IPC: H01L31/04 ,  C30B19/02 ,  C30B19/06 ,  H01L21/20 ,  H01L21/208 ,  H01L31/18

CPC classification number: C30B19/06 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02625 ,  H01L21/02628

Abstract: The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate.

公开(公告)号：EP0766322A3

公开(公告)日：1998-12-16

申请号：EP96115465

申请日：1996-09-26

Applicant: CANON KK

Inventor： ARAO KOZO ,  NAKAGAWA KATSUMI ,  IWASAKI YUKIKO

IPC: H01L31/0392 ,  H01L31/052 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

CPC classification number: H01L31/1884 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02P70/521 ,  Y10S136/291

Abstract: A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer and a second transparent conductive layer stacked on a substrate comprising iron in sequence, comprises the steps of forming the metal layer by deposition of a material constituting the metal layer from a solution and forming the first transparent conductive layer by deposition of a material constituting the first transparent conductive layer from a solution.

公开(公告)号：BRPI0517568B8

公开(公告)日：2022-03-03

申请号：BRPI0517568

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH

Inventor： HOSONO HIDEO ,  NAKAGAWA KATSUMI ,  NOMURA KENJI ,  SANO MASAFUMI ,  KAMIYA TOSHIO

IPC: H01L21/363 ,  H01L21/428 ,  H01L29/786

Abstract: óxido amorfo, e, transistor de efeito de campo. é descrito um óxido amorfo inédito aplicável, por exemplo, a uma camada ativa de um tft. o óxido amorfo compreende microcristais.

公开(公告)号：CA2585190A1

公开(公告)日：2006-05-18

申请号：CA2585190

申请日：2005-11-09

Applicant: TOKYO INST TECH ,  CANON KK

Inventor： NOMURA KENJI ,  KAMIYA TOSHIO ,  SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO

IPC: H01L29/786 ,  H01L21/363 ,  H01L21/428

Abstract: A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

公开(公告)号：DE69825517D1

公开(公告)日：2004-09-16

申请号：DE69825517

申请日：1998-03-26

Applicant: CANON KK

Inventor： IWASAKI YUKIKO ,  NAKAGAWA KATSUMI ,  YONEHARA TAKAO ,  NISHIDA SHOJI ,  SAKAGUCHI KIYOFUMI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20

Abstract: A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer, to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

公开(公告)号：DE69911118T2

公开(公告)日：2004-07-08

申请号：DE69911118

申请日：1999-06-17

Applicant: CANON KK

Inventor： MIZUTANI MASAKI ,  TANIKAWA ISAO ,  NAKAGAWA KATSUMI ,  SHOJI TATSUMI ,  UKIYO NORITAKA ,  IWASAKI YUKIKO

IPC: H01L31/04 ,  C23C16/01 ,  C30B33/00 ,  H01L21/762 ,  H01L31/18 ,  C23C14/00 ,  C23C16/00

公开(公告)号：AU739882B2

公开(公告)日：2001-10-25

申请号：AU4926897

申请日：1997-12-24

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  YONEHARA TAKAO ,  NISHIDA SHOJI ,  SAKAGUCHI KIYOFUMI

IPC: C30B19/12 ,  H01L21/20 ,  H01L21/208 ,  H01L21/3063 ,  H01L21/336 ,  H01L21/762 ,  H01L29/786 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/18 ,  H01L33/00 ,  H01L21/301

Abstract: To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

公开(公告)号：AU6126200A

公开(公告)日：2001-03-29

申请号：AU6126200

申请日：2000-09-22

Applicant: CANON KK

Inventor： NAKAGAWA KATSUMI ,  NISHIDA SHOJI

IPC: H01L31/04 ,  C30B19/02 ,  C30B19/06 ,  H01L21/20 ,  H01L21/208 ,  H01L31/18

Abstract: The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate.