公开(公告)号：WO2005049884A3

公开(公告)日：2005-06-02

申请号：PCT/US2004/037064

申请日：2004-11-05

Applicant: CASE WESTERN RESERVE UNIVERSITY ,  MEHREGANY, Mehran ,  ZORMAN, Christian, A. ,  FU, Xiao-An ,  DUNNING, Jeremy, L.

Inventor： MEHREGANY, Mehran ,  ZORMAN, Christian, A. ,  FU, Xiao-An ,  DUNNING, Jeremy, L.

IPC: H01L21/04

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

公开(公告)号：EP1690287A2

公开(公告)日：2006-08-16

申请号：EP04810481.4

申请日：2004-11-05

Applicant: CASE WESTERN RESERVE UNIVERSITY

Inventor： MEHREGANY, Mehran ,  ZORMAN, Christian, A. ,  FU, Xiao-An ,  DUNNING, Jeremy, L.

IPC: H01L21/04 ,  C23C16/32 ,  C23C16/52 ,  B81B3/00 ,  G02B26/08

CPC classification number: C23C16/325

Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.