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公开(公告)号：FR2832270A1
公开(公告)日：2003-05-16
申请号：FR0114798
申请日：2001-11-15
Applicant: CENTRE NAT RECH SCIENT
Abstract: The invention concerns a method for adjusting the operating gap of two mechanical elements of a substantially planar mechanical structure obtained by micro-etching. The method consists in attributing (A) to one of the elements (E) a fixed reference position (RF) in the direction of the residual gap separating said elements; connecting (C) the other element (OE) to the fixed reference position (RF) by an elastic link (S) and installing (D) between the fixed reference position (RF) and the other element (OE) at least a stop block defining an abutting gap, maximum displacement amplitude of the other element; subjecting (DE) the other element (OE) to a displacement antagonistic to the elastic link (S) up to the abutting position constituting the operating position, the residual gap being reduced to the difference between residual gap and abutting gap and less than the resolution of the micro-etching process. The invention is applicable to electromechanical resonators.
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公开(公告)号：FR2811163A1
公开(公告)日：2002-01-04
申请号：FR0008490
申请日：2000-06-30
Applicant: CENTRE NAT RECH SCIENT
Inventor： BUCHAILLOT LIONEL , COLLARD DOMINIQUE JULES VICTOR
Abstract: The invention concerns a filter comprising, on a substrate (2) at least a microtip (4) extending through a beam-shaped nanostructure (6). The microtip and the nanostructure are conductive, at least a the surface. The nanostructure forms an electromechanical resonator. At least an input electrode (16) and at least an output electrode (18) are formed on an insulating layer, on either side of the microtip, proximate to the tip thereof. The input electrode receives the signal to be filtered and the output electrode supplies a filtered signal. The invention is applicable in particular to wireless telecommunications.
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公开(公告)号：AU2002352338A1
公开(公告)日：2003-05-26
申请号：AU2002352338
申请日：2002-11-14
Applicant: CENTRE NAT RECH SCIENT
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公开(公告)号：CA2414354A1
公开(公告)日：2002-01-03
申请号：CA2414354
申请日：2001-06-29
Applicant: CENTRE NAT RECH SCIENT
Inventor： COLLARD DOMINIQUE JULES VICTOR , BUCHAILLOT LIONEL
Abstract: Ce filtre comprend, sur un substrat (2), au moins une micropointe (4) se prolongeant par une nanostructure (6) en forme de poutre. La micropointe et la nanostructure sont, au moins superficiellement, conductrices. La nanostructu re forme un résonateur électromécanique. Au moins une électrode d'entrée (16) e t au moins une électrode de sortie (18) sont formées sur une couche isolante, de part et d'autre de l'axe de la micropointe, au voisinage du sommet de celle- ci. L'électrode d'entrée reçoit un signal à filtrer et l'électrode de sortie fournit un signal filtré. L'invention s'applique notamment aux télécommunications sans fil.
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Patent Agency Ranking
公开(公告)号：FR2832270B1
公开(公告)日：2006-07-28
申请号：FR0114798
申请日：2001-11-15
Applicant: CENTRE NAT RECH SCIENT
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公开(公告)号：FR2811163B1
公开(公告)日：2002-10-04
申请号：FR0008490
申请日：2000-06-30
Applicant: CENTRE NAT RECH SCIENT
Inventor： BUCHAILLOT LIONEL , COLLARD DOMINIQUE JULES VICTOR
Abstract: A nano-electromechanical filter. The filter includes, on a substrate, at least one microtip extended by a beam-shaped nanostructure. The microtip and the nanostructure are at least superficially conductive. The nanostructure forms a resonator. At least one input electrode and at least one output electrode are formed on an insulating layer, on both sides of the axis of the microtip, in the vicinity of the apex of the microtip. The input electrode receives a signal to be filtered and the output electrode provides a filtered signal. The filter can be particularly applied to wireless communications.
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公开(公告)号：CA2414354C
公开(公告)日：2009-09-29
申请号：CA2414354
申请日：2001-06-29
Applicant: CENTRE NAT RECH SCIENT
Inventor： COLLARD DOMINIQUE JULES VICTOR , BUCHAILLOT LIONEL
Abstract: Ce filtre comprend, sur un substrat (2), au moins une micropointe (4) se prolongeant par une nanostructure (6) en forme de poutre. La micropointe et la nanostructure sont, au moins superficiellement, conductrices. La nanostructu re forme un résonateur électromécanique. Au moins une électrode d'entrée (16) e t au moins une électrode de sortie (18) sont formées sur une couche isolante, de part et d'autre de l'axe de la micropointe, au voisinage du sommet de celle- ci. L'électrode d'entrée reçoit un signal à filtrer et l'électrode de sortie fournit un signal filtré. L'invention s'applique notamment aux télécommunications sans fil.
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公开(公告)号：FR2839964B1
公开(公告)日：2005-09-09
申请号：FR0206388
申请日：2002-05-24
Applicant: CENTRE NAT RECH SCIENT
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公开(公告)号：FR2839964A1
公开(公告)日：2003-11-28
申请号：FR0206388
申请日：2002-05-24
Applicant: CENTRE NAT RECH SCIENT
Inventor： COLLARD DOMINIQUE JULES VICTOR , KAISER ANDREAS , QUEVY EMMANUEL PHILIPPE , BUCHAILLOT LIONEL
Abstract: Production of microsystem structure with lateral gaps comprises: (a) depositing first sacrificial layer on substrate; (b) forming structural element on sacrificial layer, to form mobile add-on structure with 2 degrees of freedom; (c) covering free surface of structural element with second sacrificial layer of thickness (e=dg) equal to linear dimension of gap; and (d) covering first sacrificial layer with layer of material to form another add-on structure. The production of a microsystem structure with lateral gaps consists of: (a) depositing a first sacrificial layer (CS1) on a substrate (S); (b) forming a structural element (SE) on this sacrificial layer, to form a mobile add-on structure with two degrees of freedom (YY, XX); (c) covering the free surface of the structural element with a second sacrificial layer (CS2) of a thickness (e=dg) equal to the linear dimension of the gap; (d) covering the first sacrificial layer with a layer of material (SM) to form another add-on structure; (e) etching the second sacrificial layer and subsequently the first sacrificial layer to prevent, at least partially, any contact between the structural element in the direction of the first and second degrees of freedom and any other add-on structure and the substrate to produce lateral gaps having a width essentially equal to the thickness of the second sacrificial layer. Independent claims are also included for: (a) a microsystem structure incorporating add-on structures, one of which is mobile with two degrees of freedom, on a substrate by this method; (b) a vibrating beam microresonator incorporating such a microsystem structure; (c) a Lame mode microresonator incorporating such a microsystem structure.
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