公开(公告)号：US20140141606A1

公开(公告)日：2014-05-22

申请号：US14164628

申请日：2014-01-27

Applicant: Chipbond Technology Corporation

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

Abstract translation: 半导体制造方法包括提供载体; 形成第一光致抗蚀剂层; 形成多个芯部; 去除第一光致抗蚀剂层; 形成第二光致抗蚀剂层; 形成多个连接部分，所述多个连接部分中的每一个包括第一连接层和第二连接层，并且连接到每个所述芯部分以形成混合凸块，其中每个所述第一连接层包括基部， 突出部分和容纳空间，每个基部包括上表面，每个突出部分突出到上表面并且位于每个芯部的顶部，每个容纳空间位于每个突出部分的外侧，第二连接层覆盖 突出部分和上表面，并且容纳空间被第二连接层填充; 去除第二光致抗蚀剂层以露出混合凸块。

公开(公告)号：US09059260B2

公开(公告)日：2015-06-16

申请号：US14164628

申请日：2014-01-27

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

Abstract translation: 半导体制造方法包括提供载体; 形成第一光致抗蚀剂层; 形成多个芯部; 去除第一光致抗蚀剂层; 形成第二光致抗蚀剂层; 形成多个连接部分，所述多个连接部分中的每一个包括第一连接层和第二连接层，并且连接到每个所述芯部分以形成混合凸块，其中每个所述第一连接层包括基部， 突出部分和容纳空间，每个基部包括上表面，每个突出部分突出到上表面并且位于每个芯部的顶部，每个容纳空间位于每个突出部分的外侧，第二连接层覆盖 突出部分和上表面，并且容纳空间被第二连接层填充; 去除第二光致抗蚀剂层以露出混合凸块。

公开(公告)号：US08823169B2

公开(公告)日：2014-09-02

申请号：US13644749

申请日：2012-10-04

Applicant: Chipbond Technology Corporation

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

Abstract translation: 半导体制造方法包括提供载体; 形成第一光致抗蚀剂层; 形成多个芯部; 去除第一光致抗蚀剂层; 形成第二光致抗蚀剂层; 形成多个连接部分，所述多个连接部分中的每一个包括第一连接层和第二连接层，并且连接到每个所述芯部分以形成混合凸块，其中每个所述第一连接层包括基部， 突出部分和容纳空间，每个基部包括上表面，每个突出部分突出到上表面并且位于每个芯部的顶部，每个容纳空间位于每个突出部分的外侧，第二连接层覆盖 突出部分和上表面，并且容纳空间被第二连接层填充; 去除第二光致抗蚀剂层以露出混合凸块。

公开(公告)号：US20140021601A1

公开(公告)日：2014-01-23

申请号：US13644749

申请日：2012-10-04

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.