公开(公告)号：US20240194646A1

公开(公告)日：2024-06-13

申请号：US18374725

申请日：2023-09-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  Lung-Hua Ho ,  Chih-Ming Kuo ,  Chen-Yu Wang ,  Chih-Hao Chiang ,  Pai-Sheng Cheng ,  Kung-An Lin ,  Chun-Ting Kuo ,  Yu-Hui Hu ,  Wen-Cheng Hsu

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552

CPC classification number: H01L25/0657 ,  H01L23/3107 ,  H01L23/49822 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0652 ,  H01L2224/13541 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2225/06517 ,  H01L2924/3511

Abstract: A semiconductor package includes a substrate, first bumps, a first chip, metal pillars, second bumps and a second chip. The substrate includes first and second conductive pads which are located on a top surface of the substrate. Both ends of the first bumps are connected to the first conductive pads and the first chip, respectively. Both ends of the metal pillars are connected to the second conductive pads and one end of the second bumps, respectively. A cross-sectional area of each of the metal pillars is larger than that of each of the second bumps. The second chip is connected to the other end of the second bumps and located above the first chip.

公开(公告)号：US20220336233A1

公开(公告)日：2022-10-20

申请号：US17856039

申请日：2022-07-01

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  You-Ming Hsu ,  Fei-Jain Wu

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78

Abstract: A method of fabricating a semiconductor package includes the steps of: disposing semiconductor devices on a carrier; forming an encapsulation on the carrier to cover the semiconductor devices, a recession of the encapsulation includes a strengthening portion and a recessed portion, the strengthening portion protrudes from the recessed portion and surrounds the recessed portion; and removing the strengthening portion of the recession of the encapsulation.

公开(公告)号：US08823169B2

公开(公告)日：2014-09-02

申请号：US13644749

申请日：2012-10-04

Applicant: Chipbond Technology Corporation

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

Abstract translation: 半导体制造方法包括提供载体; 形成第一光致抗蚀剂层; 形成多个芯部; 去除第一光致抗蚀剂层; 形成第二光致抗蚀剂层; 形成多个连接部分，所述多个连接部分中的每一个包括第一连接层和第二连接层，并且连接到每个所述芯部分以形成混合凸块，其中每个所述第一连接层包括基部， 突出部分和容纳空间，每个基部包括上表面，每个突出部分突出到上表面并且位于每个芯部的顶部，每个容纳空间位于每个突出部分的外侧，第二连接层覆盖 突出部分和上表面，并且容纳空间被第二连接层填充; 去除第二光致抗蚀剂层以露出混合凸块。

公开(公告)号：US20140217578A1

公开(公告)日：2014-08-07

申请号：US13833347

申请日：2013-03-15

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Lung-Hua Ho ,  Fei-Jain Wu ,  Chih-Ming Kuo ,  Shih-Chieh Chang ,  Chia-Jung Tu

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/1601 ,  H01L2224/16503 ,  H01L2224/81048 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81898 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/00012

Abstract: A semiconductor package process includes the following steps, providing a first substrate having a first metal bump, the first metal bump comprises a joint portion having a first softening point; providing a second substrate having a second metal bump having a top surface, a lateral surface and a second softening point, wherein the first softening point is smaller than the second softening point; performing a heating procedure to make the joint portion of the first metal bump become a softened state; and laminating the first substrate on the second substrate to make the second metal bump embedded into the joint portion in the softened state to make the top surface and the lateral surface of the at least one second metal bump being clad extendedly by compressing the joint portion in the softened state.

Abstract translation: 半导体封装工艺包括以下步骤：提供具有第一金属凸块的第一衬底，第一金属凸块包括具有第一软化点的接合部分; 提供具有第二金属凸块的第二基板，其具有顶表面，侧表面和第二软化点，其中所述第一软化点小于所述第二软化点; 执行加热程序以使第一金属凸块的接合部分变为软化状态; 并且将所述第一基板层压在所述第二基板上，以使所述第二金属凸块以软化状态嵌入所述接合部，以使所述至少一个第二金属凸块的顶表面和所述侧表面通过压缩所述接合部分 软化状态。

公开(公告)号：US20140021601A1

公开(公告)日：2014-01-23

申请号：US13644749

申请日：2012-10-04

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

公开(公告)号：US09059260B2

公开(公告)日：2015-06-16

申请号：US14164628

申请日：2014-01-27

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Shih-Chieh Chang ,  Chia-Yeh Huang ,  Chin-Tang Hsieh

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L21/76885 ,  H01L21/4853 ,  H01L23/48 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

Abstract translation: 半导体制造方法包括提供载体; 形成第一光致抗蚀剂层; 形成多个芯部; 去除第一光致抗蚀剂层; 形成第二光致抗蚀剂层; 形成多个连接部分，所述多个连接部分中的每一个包括第一连接层和第二连接层，并且连接到每个所述芯部分以形成混合凸块，其中每个所述第一连接层包括基部， 突出部分和容纳空间，每个基部包括上表面，每个突出部分突出到上表面并且位于每个芯部的顶部，每个容纳空间位于每个突出部分的外侧，第二连接层覆盖 突出部分和上表面，并且容纳空间被第二连接层填充; 去除第二光致抗蚀剂层以露出混合凸块。

公开(公告)号：US20230170301A1

公开(公告)日：2023-06-01

申请号：US17972648

申请日：2022-10-25

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  You-Ming Hsu ,  Chun-Ting Kuo ,  Lung-Hua Ho ,  Chih-Ming Kuo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/552

CPC classification number: H01L23/5286 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/552

Abstract: A semiconductor structure includes a substrate, a dielectric layer, a connection layer and wire layers. The dielectric layer is disposed on a surface of the substrate and includes vias showing the surface. The connection layer is disposed on the dielectric layer, a first connection portion of the connection layer is located in the vias and connected to the surface, a second connection portion of the connection layer is connected to the dielectric layer. A first ground portion of the ground metal layer is connected to the first connection portion of the connection layer, and a second ground portion of the ground metal layer is connected to the second connection portion of the connection layer. Each of the wire layers is disposed on the second connection portion of the connection layer, and the second ground portion is located between the adjacent wire layers.

公开(公告)号：US20220037166A1

公开(公告)日：2022-02-03

申请号：US17161818

申请日：2021-01-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  You-Ming Hsu ,  Fei-Jain Wu

IPC: H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31

Abstract: A method of fabricating a semiconductor package includes the steps of: disposing semiconductor devices on a carrier; forming an encapsulation on the carrier to cover the semiconductor devices, a recession of the encapsulation includes a strengthening portion and a recessed portion, the strengthening portion protrudes from the recessed portion and surrounds the recessed portion; and removing the strengthening portion of the recession of the encapsulation.

公开(公告)号：US20140120715A1

公开(公告)日：2014-05-01

申请号：US14147891

申请日：2014-01-06

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  Kung-An Lin ,  Sheng-Hui Chen

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/16058 ,  H01L2224/81193 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A semiconductor manufacturing method includes providing a carrier having a metallic layer, wherein the metallic layer comprises a plurality of base areas and a plurality of outer lateral areas; forming a first photoresist layer; forming a plurality of bearing portions; removing the first photoresist layer to reveal the bearing portions, each bearing portion comprises a bearing surface having a first area and a second area; forming a second photoresist layer for revealing the first areas of the bearing surfaces; forming a plurality of connection portions, wherein the first areas of the bearing surfaces are covered by the connection portions to make each connection portion connect with each bearing portion to form a snap bump; removing the outer lateral areas of the metallic layer to make the base areas form a plurality of under bump metallurgy layers.

Abstract translation: 半导体制造方法包括提供具有金属层的载体，其中所述金属层包括多个基底区域和多个外部横向区域; 形成第一光致抗蚀剂层; 形成多个轴承部; 移除第一光致抗蚀剂层以露出轴承部分，每个轴承部分包括具有第一区域和第二区域的支承表面; 形成用于露出所述支承表面的第一区域的第二光致抗蚀剂层; 形成多个连接部，其中，所述支承面的所述第一区域被所述连接部覆盖，以使每个连接部分与每个支承部分连接以形成卡扣凸块; 去除金属层的外侧面区域，以使基部区域形成多个凸起下的冶金层。

公开(公告)号：US20130196498A1

公开(公告)日：2013-08-01

申请号：US13753936

申请日：2013-01-30

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Lung-Hua Ho

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A bumping process includes providing a silicon substrate; forming a titanium-containing metal layer on silicon substrate, the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas; forming a first photoresist layer on titanium-containing metal layer; patterning the first photoresist layer to form a plurality of first opening slots; forming a plurality of copper bumps within first opening slots, said copper bump comprises a first top surface and a first ring surface; removing the first photoresist layer; forming a second photoresist layer on titanium-containing metal layer; patterning the second photoresist layer to form a plurality of second opening slots; forming a plurality of bump isolation layers at spaces, the first top surfaces and the first ring surfaces; forming a plurality of connective layers on bump isolation layers; removing the second photoresist layer, removing the second areas to form an under bump metallurgy layer.

Abstract translation: 碰撞过程包括提供硅衬底; 在硅衬底上形成含钛金属层，所述含钛金属层包括多个第一区域和多个第二区域; 在含钛金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成多个第一开口槽; 在第一开口槽内形成多个铜凸块，所述铜凸块包括第一顶表面和第一环表面; 去除第一光致抗蚀剂层; 在含钛金属层上形成第二光致抗蚀剂层; 图案化所述第二光致抗蚀剂层以形成多个第二开口槽; 在空间，第一顶表面和第一环表面处形成多个凸块隔离层; 在凸块隔离层上形成多个连接层; 去除第二光致抗蚀剂层，去除第二区域以形成凸起下的冶金层。