公开(公告)号：US20180090379A1

公开(公告)日：2018-03-29

申请号：US15342241

申请日：2016-11-03

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chia-Jung Tu ,  Chih-Lung Chen ,  Wen-Hsiang Liao ,  Chung-Hsiang Wei ,  Yung-Chi Liu

IPC: H01L21/78 ,  H01L23/544 ,  H01L21/304

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L2221/68327

Abstract: A wafer dicing method comprises providing a wafer and performing a cutting procedure and a contacting procedure. The wafer includes a plurality of dies and a metal layer, wherein the metal layer is formed on a scribe line which is formed between adjacent dies. A cutter is used to cut the metal layer along the scribe line during the cutting procedure to form a plurality of dies on the wafer, and the metal layer cut by the cutter remains a plurality of metal burrs on the dies. A brush is used to contact with the metal burrs along the cutting slot during the contracting procedure to prevent each of the metal burrs from protruding from a surface of each of the dies.

公开(公告)号：US09929051B1

公开(公告)日：2018-03-27

申请号：US15342241

申请日：2016-11-03

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chia-Jung Tu ,  Chih-Lung Chen ,  Wen-Hsiang Liao ,  Chung-Hsiang Wei ,  Yung-Chi Liu

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/30 ,  H01L23/544 ,  H01L21/304

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L2221/68327

Abstract: A wafer dicing method comprises providing a wafer and performing a cutting procedure and a contacting procedure. The wafer includes a plurality of dies and a metal layer, wherein the metal layer is formed on a scribe line which is formed between adjacent dies. A cutter is used to cut the metal layer along the scribe line during the cutting procedure to form a plurality of dies on the wafer, and the metal layer cut by the cutter remains a plurality of metal burrs on the dies. A brush is used to contact with the metal burrs along the cutting slot during the contracting procedure to prevent each of the metal burrs from protruding from a surface of each of the dies.